IGBT модули | INFINEON (EUPEC)

We’re an experienced supplier of necessary products for the category of transistors. 

Field-effect transistors - we’re offering two types of field-effect transistors: MOS-FET and IGBT transistors.

MOS-FET transistors
MOS-FET transistors cooperate well...

We’re an experienced supplier of necessary products for the category of transistors. 

Field-effect transistors -...

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Products that are marked "On Order" in the "Available Quantity" column are usually not in stock. Such products are available for purchase, however, due to their limited customer base, they usually have higher minimum quantities. DACPOL offers products that are not in stock for the following reasons: DACPOL currently has a large number of electronic components in stock and adds new products every day, however, tens of thousands of additional components and their various variants are available from our suppliers. Even though it is unreasonable to have all these products in stock due to the limited sales, we believe that it is in the best interest of our customers to make them available. Our goal is to inform customers about the maximum number of products available and enable them to make decisions based on specifications, prices, availability, required minimums and our technical advice. Please note that selecting the "In Stock" checkbox may limit the display to only products available for delivery straight from the shelf.
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picture_as_pdf Стандартни модули IGBT Infineon Стандартни модули IGBT ВИЖ ГО -- On Order -- -- -- --
picture_as_pdf Модули IGBT за голяма мощност Infineon Модули IGBT за голяма мощност ВИЖ ГО -- On Order -- -- -- --
picture_as_pdf Интегрирани силови модули PIM Infineon Интегрирани силови модули PIM ВИЖ ГО -- On Order -- -- -- --
picture_as_pdf Модули IGBT серия EASY PIM Infineon Модули IGBT серия EASY PIM ВИЖ ГО -- On Order -- -- -- --
picture_as_pdf Модули IGBT серия EconoPACK+ Infineon Модули IGBT серия EconoPACK+ ВИЖ ГО -- On Order -- -- -- --
picture_as_pdf FS25R12YT3 IGBT module Infineon FS25R12YT3 IGBT модул ВИЖ ГО FS25R12YT3 6 -- -- 1200 V 25 A
picture_as_pdf FZ800R12KS4 IGBT module Infineon FZ800R12KKS4 IGBT модул ВИЖ ГО FZ800R12KS4 On Order -- -- 1200 V 800 A
picture_as_pdf FP40R12KT3 IGBT module Infineon FP40R12KT3 IGBT модул ВИЖ ГО FP40R12KT3 On Order -- -- 1200 V 40 A
picture_as_pdf FF150R2KE3G IGBT модул Infineon FF150R2KE3G IGBT модул ВИЖ ГО FF150R12KE3G On Order -- -- 1200 V 150 A
picture_as_pdf FF200R33KF2C IGBT module Infineon FF200R33KF2C IGBT модул ВИЖ ГО FF200R33KF2C On Order -- -- 3300 V 200 A
picture_as_pdf FF200R12KS4 IGBT module Infineon FF200R12KS4 IGBT модул ВИЖ ГО FF200R12KS4 On Order -- -- 1200 V 200 A
picture_as_pdf BSM35GP120G IGBT module Infineon BSM35GP120G IGBT модул ВИЖ ГО BSM35GP120G 1 IS12 -- 1200 V 75 A
picture_as_pdf BSM50GP120 IGBT module Infineon BSM50GP120 IGBT модул ВИЖ ГО BSM50GP120 On Order IS13 -- 1200 V 50 A
picture_as_pdf BSM50GD120DN2 IGBT module Infineon BSM50GD120DN2 IGBT модул ВИЖ ГО BSM50GD120DN2 On Order IS3 mostek 3-fazowy 1200 V 50 A
picture_as_pdf BSM75GD120DLC Moduł IGBT Infineon BSM75GD120DLC IGBT модул ВИЖ ГО BSM75GD120DLC On Order IS8 mostek 3-fazowy 1200 V 75 A
picture_as_pdf FS300R12KE3 Moduł IGBT Infineon FS300R12KE3 IGBT модул ВИЖ ГО FS300R12KE3 On Order IS14 -- 1200 V 300 A
picture_as_pdf FF450R17IE4 IGBT Infineon FF450R17IE4 IGBT. ВИЖ ГО FF450R17IE4 On Order -- -- 1700 V 450 A
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We’re an experienced supplier of necessary products for the category of transistors. 

Field-effect transistors - we’re offering two types of field-effect transistors: MOS-FET and IGBT transistors.

MOS-FET transistors
MOS-FET transistors cooperate well in parallel connections. They can be combined in parallel up to several dozen pieces. They are easily controlled and do not require adjustment in the load current distribution between them.

IGBT transistors
IGBT transistors are characterized by a small decrease in conduction voltage (from 2.15 - 5.2V) at high current (10 - 3600A), high voltage blocking capacity (250 - 6500V), voltage control via an isolated gate, and high switching speed. They are produced in the form of standard modules, high-frequency modules, high voltage modules as well as intelligent modules, and high voltage intelligent modules. In addition, high-voltage diode modules are offered for cooperation with IGBT transistors.

The IGBT transistors manufactured in the form of intelligent modules contain, besides transistors, control systems as well as short circuit and overvoltage protection.