Силиконови карбидни модули - Powerex и Mitsubishi
  • Силиконови карбидни модули - Powerex и Mitsubishi

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Производител: Mitsubishi

Силиконови карбидни модули - Powerex и Mitsubishi

Silicone carbide (SiC)modules - Powerex and Mitsubishi

Advantages
Silicone carbide (SiC)chip
Low switching losses
Fast, reverse Schottky diode
Isolated baseplate

 

Full SIC

Type VCES
[V]
IC
[A]
Configuration Package

CMF800DX1-24A

1200 800 Full SiC Dual 62mm x 122mm

FMF1200DX1-24A

1200 1200 Full SiC Dual 122mm x 122mm

PMF75CL1A120

1200 75 Full SiC Six Pack IPM 67mm x 131mm

PSF20L91A6-A

600 20 Full SiC PFC Super Mini DIP

QJD1210010

1200 100 Split Dual MOSFET 109.8mm x 56.1mm

QJD1210011

1200 100 Split Dual MOSFET 109.8mm x 56.1mm

QJD1210SA1

1200 100 Split Dual MOSFET 109.8mm x 56.1mm

QJD1210SA2

1200 100 Split Dual MOSFET 109.8mm x 56.1mm

QRD1210004

1200 100 Split Dual Super Fast Diode 109.8mm x 56.1mm

QRD1210005

1200 100 Split Dual Super Fast Diode 109.8mm x 56.1mm

Hybrid Si/SiC

Type VCES
[V]
IC
[A]
Configuration Package

CMH100DY-24NFH

1200 100 Hybrid Dual 94mm x 48mm

CMH1200DC-34S

1700 1200 Hybrid Dual 1400mm x 130mm

CMH150DY-24NFH

1200 150 Hybrid Dual 94mm xm 48mm

CMH200DU-24NFH

1200 200 Hybrid Dual 108mm x 62mm

CMH300DU-24NFH

1200 300 Hybrid Dual 108mm x 62mm

CMH400DU-24NFH

1200 400 Hybrid Dual 110mm x 80mm

CMH600DU-24NFH

1200 600 Hybrid Dual 110mm x 80mm

PMH200CS1D060

600 200 Hybrid Six Pack IPM 50mm x 120mm

PMH75CL1A120

1200 75 Hybrid Six Pack IPM 67mm x 131mm

PS219WA4-4W

600 15 Hybrid Six Pack IPM Super Mini DIP

PSH20L91A6-A

600 20 PFC Super Mini DIP

PSH20L91B6-A

600 20 Hybrid PFC Super Mini DIP

QID1210005

1200 100 Split Dual IGBT 109.8mm x 56.1mm

QID1210006

1200 100 Split Dual IGBT 109.8mm x 56.1mm

QID1210007

1200 100 Split Dual IGBT 109.8mm x 56.1mm

QID1215003

1200 150 Split Dual IGBT 109.8mm x 56.1mm

Dimensions

Moduły z węglika krzemu - Powerex i Mitsubishi wymiar

Moduły z węglika krzemu - Powerex i Mitsubishi wymiar

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Silicone carbide (SiC)modules - Powerex and Mitsubishi

Advantages
Silicone carbide (SiC)chip
Low switching losses
Fast, reverse Schottky diode
Isolated baseplate

 

Full SIC

Type VCES
[V]
IC
[A]
Configuration Package

CMF800DX1-24A

1200 800 Full SiC Dual 62mm x 122mm

FMF1200DX1-24A

1200 1200 Full SiC Dual 122mm x 122mm

PMF75CL1A120

1200 75 Full SiC Six Pack IPM 67mm x 131mm

PSF20L91A6-A

600 20 Full SiC PFC Super Mini DIP

QJD1210010

1200 100 Split Dual MOSFET 109.8mm x 56.1mm

QJD1210011

1200 100 Split Dual MOSFET 109.8mm x 56.1mm

QJD1210SA1

1200 100 Split Dual MOSFET 109.8mm x 56.1mm

QJD1210SA2

1200 100 Split Dual MOSFET 109.8mm x 56.1mm

QRD1210004

1200 100 Split Dual Super Fast Diode 109.8mm x 56.1mm

QRD1210005

1200 100 Split Dual Super Fast Diode 109.8mm x 56.1mm

Hybrid Si/SiC

Type VCES
[V]
IC
[A]
Configuration Package

CMH100DY-24NFH

1200 100 Hybrid Dual 94mm x 48mm

CMH1200DC-34S

1700 1200 Hybrid Dual 1400mm x 130mm

CMH150DY-24NFH

1200 150 Hybrid Dual 94mm xm 48mm

CMH200DU-24NFH

1200 200 Hybrid Dual 108mm x 62mm

CMH300DU-24NFH

1200 300 Hybrid Dual 108mm x 62mm

CMH400DU-24NFH

1200 400 Hybrid Dual 110mm x 80mm

CMH600DU-24NFH

1200 600 Hybrid Dual 110mm x 80mm

PMH200CS1D060

600 200 Hybrid Six Pack IPM 50mm x 120mm

PMH75CL1A120

1200 75 Hybrid Six Pack IPM 67mm x 131mm

PS219WA4-4W

600 15 Hybrid Six Pack IPM Super Mini DIP

PSH20L91A6-A

600 20 PFC Super Mini DIP

PSH20L91B6-A

600 20 Hybrid PFC Super Mini DIP

QID1210005

1200 100 Split Dual IGBT 109.8mm x 56.1mm

QID1210006

1200 100 Split Dual IGBT 109.8mm x 56.1mm

QID1210007

1200 100 Split Dual IGBT 109.8mm x 56.1mm

QID1215003

1200 150 Split Dual IGBT 109.8mm x 56.1mm

Dimensions

Moduły z węglika krzemu - Powerex i Mitsubishi wymiar

Moduły z węglika krzemu - Powerex i Mitsubishi wymiar

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