Полупроводникови силициево-карбидни елементи

Diodes and fully controlled elements made in SiC technology are new Dacpol products. Silicon Carbide (SiC) is a material, which allow to manufacture semiconductor elements with very attractive parameters. In comparison to classical Silicon elements, SiC semiconductors have big resistance for over-voltages. They also have high operation temperature, low resistance during conducting.

Schottky diodes, which are, at this moment, most popular SiC element, have very short turn of time t_rr and low reverse recovery charge. Above properties allow to use those elements as backward and zero diodes, which decreases converter power losses and allow to operate at higher frequency.
Similar, usage of fully controlled elements like JFET and BJT allow to decrease converter power losses, rise its operation temperature and frequency. Because of that we can design a small device, high power densities, and high output power quality.

Semiconductors made in SiC technology are used in applicationsm where high reliability level is needed.
• High frequency converters.
• Converters which work with photo-voltaic cells.
• Power factor correction systems
• High temperature DC/DC and AC/DC converters
• UPS
• Resonant systems
• Electronic devices

Casing TO - 247

Casing SOT-227

Configuration 1	Configuration 2
SDA05S120 current-voltage characteristic	SDA10S120 current-voltage characteristic
SDP10S120D current-voltage characteristic	SDP20S120D current-voltage characteristic

 SDP30S120 current-voltage characteristic

Standard	High temperature