SiC MOSFET Power Switches Control

SiC MOSFET Power Switches can be controlled with a full range of SCALE Gate Drivers. Silicon Carbide (SiC) MOSFETs drastically enhance switching performance of high power inverters, having high breakdown electric field strength and carrier drift velocity with improved thermal performance.

Nonetheless. SiC require fast short-circuit protection in more complex designs, which poses a challenge for gate drivers that have to support varying voltages in different SiC topologies. 

SCALE-iDriver SiC MOSFET Gate Drivers Integrated Circuits

PI’s new SIC1182K SCALE-iDriver CI is a highly efficient, single channel MOSFET gate driver that provides the highest peak-output gate current without connecting an external boost. It can be set up to work with different gate-drive voltages required by different types of currently available SiC MOSFETs.

SCALE-2, SCALE-2+ Gate Driver Cores and SCALE-iDriver Gate Driver Integrated Circuits

Alongside driving convensionals Si power devices like IGBTs and MOSFETs, SCALE-iDriver gate drivers ICs and SCALE-2 and SCALE-2+ gate driver cores are capable of driving SiC MOSFET power switches.

Available Gate Drivers

• SIC1182K - SiC MOSEFT Gate Driver

• SCALE-iDriver - Gate Driver IC

• 2SC0115T-12 - SCALE-2+ Driver Core

• 2SC0435T-17 - SCALE-2+ Driver Core

• 1SC2060P-17 - SCALE-2 Driver Core with Planar Transformers

• 2SC0650P-17 - SCALE-2 Driver Core with Planar Transformers

• 2SC0535T-17 - SCALE-2 Driver Core

• 2SC0635T-45 - SCALE-2 Driver Core

SiC Poses New and Unique Challenges for Gate Drivers

SIC MOSFET power switches from different manufacturers and of varying generations have different levels of gate turn-on and turn-off voltage. Some of MOSFETs are able to operate with 15V/ -10 V while others work with 19 V/ -6 V. Moreover, some devices need a regulated turn-on voltage while others require a regulated negative turn-off voltage to make sure that they do not exceed the gate-source safe operating area.

To adapt SCALE gate drivers to drive different MOSFETs, the control (VEE regulator) of the voltage  dividing into positive and negative voltage rails related to the gate turn-on and turn-off levels can be configured. For more information please check the application note AN-1601.

Description: SCALE-iDriver can match different SiC MOSFETs by adjusting drive to VGS voltage levels

Why control SiC MOSFETS with SCALE Gate Drivers?

Adjustable gate voltage levels by external VEE circuit <=2 μs short-circuit response time High output current capability High isolation properties Advance active clamping with dv/dt feedback High switching frequency up to 500 kHz SiC MOSFET breakdown voltages up to 4,5 kV High MTBF/low FIT value Parallel connecting of MOSFET modules Compatible with all SiC MOSFET designs

Extensive Protection Features of SIC1182K

SiC Advanced Active Clamping Ultrafast short-circuit control Over-current fault turn-off Primary and secondary undervoltage lockout (UVLO)