Musíte být přihlášen
Kategorie
- Tranzistory | GeneSiC
- SiC MOSFET moduly | Mitsubishi
- SiC MOSFET moduly | STARPOWER
- Moduly ABB SiC MOSFET
- Moduly IGBT | MITSUBISHI
- Tranzistorové moduly | MITSUBISHI
- Moduly MOSFET | MITSUBISHI
- Tranzistorové moduly | ABB
- Moduly IGBT | POWEREX
- Moduly IGBT | INFINEON (EUPEC)
- Polovodičové prvky z karbidu křemíku (SiC)
- Tranzistorové moduly | DYNEX
- MOSFET tranzistory | VISHAY (IR)
- SiC MOSFET moduly | POWEREX
- Moduly IGBT | Semikron
- Ovladače MOSFET a IGBT | Semikron
- Moduly MOSFET | Microsemi
- IGBT tranzistory | VISHAY (IR)
- Moduly IGBT Starpower
- EPC GAN tranzistory
obraz | Zobrazit produkt | Č. Výrobce | |||||||||||||||||||||||||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
picture_as_pdf | SEMIKRON | SKM600GAL07E3 Jeden přepínač | ZOBRAZIT | SKM600GAL07E3 | On Order | -- | -- | -- | -- | -- | Single Switch | 650 V | 600 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | |
picture_as_pdf | SEMIKRON | SK10DGDL07E3ETE1 IGBT modul. | ZOBRAZIT | SK10DGDL07E3ETE1 | On Order | -- | -- | -- | -- | -- | Seven Pack | 650 V | 10:00 AM | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | |
-- | GeneSiC Semiconductor | G3F45MT06K Tranzystor SiC MOSFET | ZOBRAZIT | G3F45MT06K | On Order | TO-247-4 | -- | -- | -- | 52 A | -- | -- | -- | 37 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 45 mΩ | - | 650 V | |
picture_as_pdf | Mitsubishi | FMF800DC-66BEW MOSFET SiC | ZOBRAZIT | FMF800DC-66BEW | On Order | -- | -- | -- | -- | -- | 2in1 | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 3300 V | |
picture_as_pdf | SEMIKRON | Skiip39mlit12F4v1 Specifický zákazník | ZOBRAZIT | SKiiP39MLIT12F4V1 | On Order | -- | -- | -- | -- | -- | Customer Specific | 1200 V | 400 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | |
picture_as_pdf | Mitsubishi | AS-IPM. | ZOBRAZIT | -- | On Order | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | |
picture_as_pdf | Mitsubishi | 5. generace IGBT moduly - Série A | ZOBRAZIT | -- | On Order | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | |
picture_as_pdf | Infineon | Standardní moduly IGBT | ZOBRAZIT | -- | On Order | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | |
picture_as_pdf | Mitsubishi | PSF25S92F6 MOSFET SIC. | ZOBRAZIT | PSF25S92F6 | On Order | -- | -- | -- | -- | -- | 6in1 | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 25 V | |
-- | GeneSiC Semiconductor | G3F40MT12J Tranzystor SiC MOSFET | ZOBRAZIT | G3F40MT12J | On Order | TO-263-7 | -- | -- | -- | 68 A | -- | -- | -- | 48 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 40 mΩ | - | 1200 V | |
picture_as_pdf | SEMIKRON | SKM600GB066D Poloviční most | ZOBRAZIT | SKM600GB066D | On Order | -- | -- | -- | -- | -- | Half Bridge | 600 V | 600 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | |
-- | GeneSiC Semiconductor | G3F40MT12K Tranzystor SiC MOSFET | ZOBRAZIT | G3F40MT12K | On Order | TO-247-4 | -- | -- | -- | 61 A | -- | -- | -- | 43 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 40 mΩ | - | 1200 V | |
picture_as_pdf | ABB | IGBT IGB. | ZOBRAZIT | -- | On Order | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | |
picture_as_pdf | Mitsubishi | 3. Modul generování IPM - série V. | ZOBRAZIT | -- | On Order | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | |
picture_as_pdf | Mitsubishi | MOSFET moduly - MITSUBISHI | ZOBRAZIT | -- | On Order | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | |
picture_as_pdf | Mitsubishi | 6 Generování modulů IGBT -SERIA NX | ZOBRAZIT | -- | On Order | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | |
picture_as_pdf | GeneSiC Semiconductor | G3R60MT07J MOSFET SIC. | ZOBRAZIT | G3R60MT07J | On Order | TO-263-7 | -- | -- | -- | 44 A | -- | -- | -- | 31 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | - | 60 mΩ | 750 V | |
picture_as_pdf | Mitsubishi | PSF15S92F6 MOSFET SIC. | ZOBRAZIT | PSF15S92F6 | On Order | -- | -- | -- | -- | -- | 6in1 | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 15 V | |
-- | GeneSiC Semiconductor | G3F75MT12J Tranzystor SiC MOSFET | ZOBRAZIT | G3F75MT12J | On Order | TO-263-7 | -- | -- | -- | 39 A | -- | -- | -- | 28 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 75 mΩ | - | 1200 V | |
picture_as_pdf | EPC (Efficient Power Conversion) | EPC2304 Transistor | ZOBRAZIT | EPC2304 | On Order | -- | -- | -- | -- | -- | Single | -- | -- | -- | -- | -- | -- | -- | 5 | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 200 | 6 | 21 | 7-May | 2-Jun | 115 | 102 | 260 | QFN 3 x 5 | -- | -- | -- | |
picture_as_pdf | EPC (Efficient Power Conversion) | Transistor EPC23103 | ZOBRAZIT | EPC23103 | On Order | -- | -- | -- | -- | -- | Half Bridge ePower Stage | -- | -- | -- | -- | -- | -- | -- | 7-Jun | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 100 | 6 | -- | -- | -- | 21, 22.95 | 25 | 109 | QFN 3.5 x 5 | -- | -- | -- | |
picture_as_pdf | SEMIKRON | SKM200GB12F4 Poloviční most | ZOBRAZIT | SKM200GB12F4 | On Order | -- | -- | -- | -- | -- | Half Bridge | 1200 V | 200 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | |
-- | Mitsubishi | DIPIPM TM 600V & 1200V | ZOBRAZIT | -- | On Order | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | |
picture_as_pdf | POWEREX | DUAL HVIGBT QID3320004 modul | ZOBRAZIT | -- | On Order | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- |
DACPOL is an experienced supplier of necessary products for the category of transistors. Our clients can rely on the quality of the products and services we provide, regardless of whether they buy MOSFET modules, DC diodes or silicon carbide semiconductors.
We are ready to provide you with a wholesale quantity of the products you are looking for. Regardless of whether you order single product from the transistors category or buy them in bulk quantities, we offer a comprehensive delivery of all products.
To meet the highest quality of service, we offer our clients only products from reliable suppliers and manufacturers. Our team of engineers, at every stage, serves their knowledge and advice so as to be able to provide customers with information on the maintenance and use of purchased products
The products DACPOL offers from the group of electronic components, power supply and connectors is much larger and includes various types of electrical and industrial items from the category of transistors. On our website you can familiarize yourself with the full range of products from the group of electronic components, power supply and connectors.
Field effect transistor
We offer two types of field effect transistors: MOS-FET and IGBT transistors.
MOS-FET transistors
MOS-FET transistors cooperate well in parallel connections. They can be combined in parallel up to several dozen pieces. They are easily controlled and do not require adjustment in the load current distribution between them.
They are available in the current range from 1.1A to 250A and voltages from 12V to 900V. The MOS-FET transistors are manufactured in the following types of enclosures: SO8, SOT223, D-Pak, D2-Pak, I-Pak, TO-262, TO-220, TO-247, SOT-227, HEXDIP.
IGBT transistors
IGBT transistors are characterized by a small decrease in conduction voltage (from 2.15 - 5.2V) at high current (10 - 3600A), high voltage blocking capacity (250 - 6500V), voltage control via an isolated gate and high switching speed. They are produced in the form of standard modules, high frequency modules, high voltage modules as well as intelligent modules and high voltage intelligent modules. In addition, high-voltage diode modules are offered for cooperation with IGBT transistors.
They are available in electro-insulated enclosures as single transistors, two-bridge modules (half-bridge), six-element modules (full bridge), seven-element modules (full bridge with transistor). Typical enclosures are: TO220, TO247, A1, NF1, NF2, NF3, NF4, NF5, NF6, U2, U3, U4, U5, U6, U7, U8, A1, A2, A3, A4, A5, H1, H2, H3, H4, H5, H6, H7, H8, H9, H10, H11, H12, H13, DM1, DM2, HV1, HV2, HV3, HV4, HV5, HV6, HV7, HV8, SD1, SD2, SD3, and SD4.
The IGBT transistors manufactured in the form of intelligent modules contain, besides transistors, control systems as well as short circuit and overvoltage protections.