SIC-MOSFET-Module

Features

• Power loss reduced up to 70%

SiC Power Modules have approximately 10 times the critical breakdown strength than silicon modules and their drift layer is one-tenth of the thickness. This allows a large reduction in electrical resistance, which reduces power losses.

• High-temperature operation

SiC has a band gap three times greater than that of silicon, which prevents leakage current flow and enables operation at high temperatures.

• High-speed switching operation

In SiC modules, due to the high dielectric breakdown, power loss is reduced and it is easier to obtain high voltage. It is also possible to use Schottky Barrier Diodes (SBDs), which cannot be used with silicon modules. SBDs are characterized by fast switching motion because they don't have accumulation carriers. As a result, high-speed switching can be realized.

• Improved heat dissipation

SiC has three times the heat conductivity of silicon, which improves heat dissipation.

Applications

• Industrial equipment
• Traction
• PV application
• Home appliances