The SX-R 20-1 set consists of a passive near-field probe for the measurement of high-frequency magnetic fields up to 20 GHz during development. The probe head of the SX-R 20-1 allows measurements close to the electronic assembly, e.g. on individual IC pins, conductors, components and their connections to locate sources of interference. The field orientation and field distribution on the electronic assembly can be determined by guiding the near-field probe accordingly. The near-field probe is small and handy. It has a sheath current attenuation and is electrically shielded. The near-field probe is connected to a spectrum analyzer or an oscilloscope with 50 Ω input.
The SX-R 20-1 set consists of a passive near-field probe for the measurement of high-frequency magnetic fields up to 20 GHz during development. The probe head of the SX-R 20-1 allows measurements close to the electronic assembly, e.g. on individual IC pins, conductors, components and their connections to locate sources of interference. The field orientation and field distribution on the electronic assembly can be determined by guiding the near-field probe accordingly. The near-field probe is small and handy. It has a sheath current attenuation and is electrically shielded. The near-field probe is connected to a spectrum analyzer or an oscilloscope with 50 Ω input.