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Manufacturer: GeneSiC Semiconductor

SiC MOSFET transistor G3F33MT06J

  • G3F33MT06J
  • Housing type TO-263-7
  • Continous current ID at Tc=25oC
  • Continous current IC at Tc=100oC
  • RDS(ON) for VGS = 18 V 33 mΩ
  • RDS(ON) for VGS = 15 V -
  • Voltage UDS 650 V

The "G3F33MT06J" SiC MOSFET transistor is made using GeneSiC's patented Trench-Assisted Planar technology.

Features:

  • Low Temperature Coefficient of RDS(ON)
  • Lower QG and Smaller RG(INT)
  • Low Device Capacitances (COSS, CRSS)
  • LoRing – Electromagnetically Optimazed Design
  • Robust Body Diode with Low VF and Low QRR
  • 100% Avalanche (UIL) Tested

Applications:

  • Solar Inverters
  • EV/HEV Charging
  • Motor Drives
  • High Voltage DC-DC Converters
  • Switched Mode Power Supplies
  • UPS
  • Smart Grid Transmission and Distribution
  • Induction Heating and Welding
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  • Housing type TO-263-7
  • Continous current ID at Tc=25oC
  • Continous current IC at Tc=100oC
  • RDS(ON) for VGS = 18 V 33 mΩ
  • RDS(ON) for VGS = 15 V -
  • Voltage UDS 650 V

The "G3F33MT06J" SiC MOSFET transistor is made using GeneSiC's patented Trench-Assisted Planar technology.

Features:

  • Low Temperature Coefficient of RDS(ON)
  • Lower QG and Smaller RG(INT)
  • Low Device Capacitances (COSS, CRSS)
  • LoRing – Electromagnetically Optimazed Design
  • Robust Body Diode with Low VF and Low QRR
  • 100% Avalanche (UIL) Tested

Applications:

  • Solar Inverters
  • EV/HEV Charging
  • Motor Drives
  • High Voltage DC-DC Converters
  • Switched Mode Power Supplies
  • UPS
  • Smart Grid Transmission and Distribution
  • Induction Heating and Welding
Less
Read more