Semiconductors

Our Offer

In our offer, you will find SiC diodes and SiC and GaN transistors.

Advantages over Silicon

Compared to silicon, which has a bandgap of 1.12 eV, our SiC and GaN semiconductors have significantly larger bandgaps of 3.26 eV and...

Our Offer

In our offer, you will find SiC diodes and SiC and GaN...

Read more

Categories

Show filters
Hide filtersFiltrationShow filters X
Manufacturers
more... less
Housing type
more... less
IFAV
more... less
Housing type
more... less
Continous current ID at Tc=25oC
more... less
Configuration
more... less
Continous current ID at Tc=100oC
more... less
Continous current IC at Tc=100oC
more... less
Rds(on)
more... less
Voltage URRM
more... less
VDSmax
more... less
VGSmax
more... less
QG typ (nC)
more... less
QGS typ (nC)
more... less
QGD typ (nC)
more... less
QOSS typ (nC)
more... less
ID (A)
more... less
Pulsed ID (A)
more... less
Package (mm)
more... less
RDS(ON) for VGS = 18 V
more... less
RDS(ON) for VGS = 15 V
more... less
Voltage UDS
more... less
Filter
Information close
Products that are marked "On Order" in the "Available Quantity" column are usually not in stock. Such products are available for purchase, however, due to their limited customer base, they usually have higher minimum quantities. DACPOL offers products that are not in stock for the following reasons: DACPOL currently has a large number of electronic components in stock and adds new products every day, however, tens of thousands of additional components and their various variants are available from our suppliers. Even though it is unreasonable to have all these products in stock due to the limited sales, we believe that it is in the best interest of our customers to make them available. Our goal is to inform customers about the maximum number of products available and enable them to make decisions based on specifications, prices, availability, required minimums and our technical advice. Please note that selecting the "In Stock" checkbox may limit the display to only products available for delivery straight from the shelf.
PDF Image
Manufacturer
Product name
View the product No. Manufacturer
Quantity available
Housing type
Housing type
Continous current ID at Tc=25oC
Configuration
Continous current ID at Tc=100oC
Continous current IC at Tc=100oC
Rds(on)
Voltage URRM
VDSmax
VGSmax
QG typ (nC)
QGS typ (nC)
QGD typ (nC)
QOSS typ (nC)
ID (A)
Pulsed ID (A)
Package (mm)
RDS(ON) for VGS = 18 V
RDS(ON) for VGS = 15 V
Voltage UDS
-- G3R12MT12K Tranzystor SiC MOSFET GeneSiC Semiconductor G3R12MT12K Tranzystor SiC MOSFET SEE IT G3R12MT12K Tranzystor SiC MOSFET 48682 On Order TO-247-4 -- -- 155 A -- 110 A -- -- -- -- -- -- -- -- -- -- -- -- 12 mΩ 1200 V
-- G3F60MT06K Tranzystor SiC MOSFET GeneSiC Semiconductor G3F60MT06K Tranzystor SiC MOSFET SEE IT G3F60MT06K Tranzystor SiC MOSFET 55811 On Order TO-247-4 -- -- 42 A -- 30 A -- -- -- -- -- -- -- -- -- -- -- -- 60 mΩ -- 650 V
-- G3F60MT06D Tranzystor SiC MOSFET GeneSiC Semiconductor G3F60MT06D Tranzystor SiC MOSFET SEE IT G3F60MT06D Tranzystor SiC MOSFET 55812 On Order TO-247-3 -- -- 42 A -- 30 A -- -- -- -- -- -- -- -- -- -- -- -- 60 mΩ -- 650 V
-- G3F60MT06J Tranzystor SiC MOSFET GeneSiC Semiconductor G3F60MT06J Tranzystor SiC MOSFET SEE IT G3F60MT06J Tranzystor SiC MOSFET 55813 On Order TO-263-7 -- -- 46 A -- 32 A -- -- -- -- -- -- -- -- -- -- -- -- 60 mΩ -- 650 V
-- G3F45MT06K Tranzystor SiC MOSFET GeneSiC Semiconductor G3F45MT06K Tranzystor SiC MOSFET SEE IT G3F45MT06K Tranzystor SiC MOSFET 55814 On Order TO-247-4 -- -- 52 A -- 37 A -- -- -- -- -- -- -- -- -- -- -- -- 45 mΩ - 650 V
-- G3F45MT06D Tranzystor SiC MOSFET GeneSiC Semiconductor G3F45MT06D Tranzystor SiC MOSFET SEE IT G3F45MT06D Tranzystor SiC MOSFET 55815 On Order TO-247-3 -- -- 52 A -- 37 A -- -- -- -- -- -- -- -- -- -- -- -- 45 mΩ - 650 V
-- G3F45MT06J Tranzystor SiC MOSFET GeneSiC Semiconductor G3F45MT06J Tranzystor SiC MOSFET SEE IT G3F45MT06J Tranzystor SiC MOSFET 55816 On Order TO-263-7 -- -- 57 A -- 42 A -- -- -- -- -- -- -- -- -- -- -- -- 45 mΩ - 650 V
-- G3F33MT06K Tranzystor SiC MOSFET GeneSiC Semiconductor G3F33MT06K Tranzystor SiC MOSFET SEE IT G3F33MT06K Tranzystor SiC MOSFET 55817 On Order TO-247-4 -- -- 70 A -- 50 A -- -- -- -- -- -- -- -- -- -- -- -- 33 mΩ - 650 V
-- G3F33MT06J Tranzystor SiC MOSFET GeneSiC Semiconductor G3F33MT06J Tranzystor SiC MOSFET SEE IT G3F33MT06J Tranzystor SiC MOSFET 55818 On Order TO-263-7 -- -- -- 55 A -- -- -- -- -- -- -- -- -- -- -- -- 33 mΩ - 650 V
-- Diody firmy GeneSiC GeneSiC Semiconductor Diody firmy GeneSiC SEE IT Diody firmy GeneSiC 34305 On Order -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
picture_as_pdf SiC MOSFET transistor G3R12MT12K GeneSiC Semiconductor SiC MOSFET transistor G3R12MT12K SEE IT G3R12MT12K On Order -- -- TO-247-4 155 A -- -- -- -- -- -- -- -- -- -- -- -- -- 12 mΩ 1200 V
picture_as_pdf SiC MOSFET transistor G3R60MT07K GeneSiC Semiconductor SiC MOSFET transistor G3R60MT07K SEE IT G3R60MT07K On Order -- -- TO-247-4 48 A -- -- -- -- -- -- -- -- -- -- -- -- -- - 60 mΩ 750 V
-- EPC7020 Tranzystor EPC (Efficient Power Conversion) EPC7020 Tranzystor SEE IT EPC7020 Tranzystor 53882 On Order -- -- -- -- Single Rad Hard -- -- 11 -- 200 6 11-Jul 3-May 2-Feb 76 39 170 BGA 4.6 x 2.6 -- -- --
-- EPC7007 Tranzystor EPC (Efficient Power Conversion) EPC7007 Tranzystor SEE IT EPC7007 Tranzystor 53879 On Order -- -- -- -- Single Rad Hard -- -- 25 -- 200 6 5-Apr 1-May 1 37 20 80 LGA 3.6 x 1.6 -- -- --
-- G3F40MT12J Tranzystor SiC MOSFET GeneSiC Semiconductor G3F40MT12J Tranzystor SiC MOSFET SEE IT G3F40MT12J Tranzystor SiC MOSFET 55824 On Order TO-263-7 -- -- 68 A -- 48 A -- -- -- -- -- -- -- -- -- -- -- -- 40 mΩ - 1200 V
-- GD10MPS12A Dioda SiC GeneSiC Semiconductor GD10MPS12A Dioda SiC SEE IT GD10MPS12A Dioda SiC 36236 On Order -- TO-220-2 -- -- -- -- -- 1200 V -- -- -- -- -- -- -- -- -- -- -- --
-- EPC7019 Tranzystor EPC (Efficient Power Conversion) EPC7019 Tranzystor SEE IT EPC7019 Tranzystor 53808 On Order -- -- -- -- Single Rad Hard -- -- 1-May -- 40 6 23 7-Jun 3-Apr 51 95 530 LGA 6.05 x 2.3 -- -- --
-- EPC7014 Tranzystor EPC (Efficient Power Conversion) EPC7014 Tranzystor SEE IT EPC7014 Tranzystor 53811 On Order -- -- -- -- Single Rad Hard -- -- 340 -- 60 7 0.142 0.043 0.025 0.764 2-Apr 4 BGA 0.9 x 0.9 -- -- --
-- G3R60MT07K Tranzystor SiC MOSFET GeneSiC Semiconductor G3R60MT07K Tranzystor SiC MOSFET SEE IT G3R60MT07K Tranzystor SiC MOSFET 36229 On Order TO-247-4 -- -- 48 A -- 34 A -- -- -- -- -- -- -- -- -- -- -- -- - 60 mΩ 750 V
-- G3R60MT07J Tranzystor SiC MOSFET GeneSiC Semiconductor G3R60MT07J Tranzystor SiC MOSFET SEE IT G3R60MT07J Tranzystor SiC MOSFET 36227 On Order TO-263-7 -- -- 44 A -- 31 A -- -- -- -- -- -- -- -- -- -- -- -- - 60 mΩ 750 V
-- EPC7003 Tranzystor EPC (Efficient Power Conversion) EPC7003 Tranzystor SEE IT EPC7003 Tranzystor 53846 On Order -- -- -- -- Single Rad Hard -- -- 30 -- 100 6 1-Aug 0.6 0.3 9-Apr 10 42 LGA 1.7 x 1.1 -- -- --
-- EPC23104 Tranzystor EPC (Efficient Power Conversion) EPC23104 Tranzystor SEE IT EPC23104 Tranzystor 53851 On Order -- -- -- -- Half Bridge ePower Stage -- -- 11 -- 100 6 -- -- -- 15, 16.6 15 78 QFN 3.5 x 5 -- -- --
-- EPC23103 Tranzystor EPC (Efficient Power Conversion) EPC23103 Tranzystor SEE IT EPC23103 Tranzystor 53853 On Order -- -- -- -- Half Bridge ePower Stage -- -- 7-Jun -- 100 6 -- -- -- 21, 22.95 25 109 QFN 3.5 x 5 -- -- --
-- EPC7004 Tranzystor EPC (Efficient Power Conversion) EPC7004 Tranzystor SEE IT EPC7004 Tranzystor 53858 On Order -- -- -- -- Single Rad Hard -- -- 7 -- 100 6 6-Apr 2-Feb 1-Jan 37 60 160 LGA 4.1 x 1.6 -- -- --
Results per page:

Our Offer

In our offer, you will find SiC diodes and SiC and GaN transistors.

Advantages over Silicon

Compared to silicon, which has a bandgap of 1.12 eV, our SiC and GaN semiconductors have significantly larger bandgaps of 3.26 eV and 3.39 eV respectively.

As a result, both SiC and GaN can handle higher voltages and frequencies, making them ideal for advanced technological applications.

SiC and GaN Technology

SiC and GaN have unique properties that affect their performance and various applications. The choice of material depends on the specific requirements of the projects and applications.