5th generation IGBT modules - series A

Technical data

• low V _CE(sat)
• high short-circuit resistance,
• low gate capacitance,
• approximately 10% higher inverter current: 15% better ∆T(j- f) compared to other modules offered on the market of the Trench type,
• optimized housing size,
• excellent thermal conductivity due to the use of aluminum nitride in the insulating layer,
• low connection inductance,
• definite improved resistance to temperature cycles through the use of welding technology.

Symbol	Electrical schematic
H
D

Housing A1	Housing A2
Housing A3	Housing A4
Housing A5	Housing A6