R&D

In applications from 20 W to 20 MW, and with device voltages from 650 V to 6.5 kV, GeneSiC silicon carbide (SiC) MOSFETs and Schottky MPS™ diodes drive high-speed, high-efficiency power conversion across diverse markets including EV, industrial automation, solar, wind, grid, motor drives and defense. High-volume, high-quality shipments ensure application performance, reliability and uptime availability.

A novel GeneSiC Merged-PiN Schottky design combines the best features from both PiN and Schottky diode structures, producing the lowest forward voltage drop (VF), high surge-current capability (IFSM), and minimized temperature-independent switching losses.