GeneSiC technology – transistors, modules, chips

In applications from 20 W to 20 MW, and with device voltages from 650 V to 6.5 kV, GeneSiC silicon carbide (SiC) MOSFETs and Schottky MPS™ diodes drive high-speed, high-efficiency power conversion across diverse markets including EV, industrial automation, solar, wind, grid, motor drives and defense. High-volume, high-quality shipments ensure application performance, reliability and uptime availability.

Trench-Assisted Planar Gate: No-Compromise Technology

SiC MOSFETs offer superior conductivity and switching performance compared to silicon (Si) due to their ‘wide bandgap’ characteristics and high electric-field strength. However, traditional designs using legacy planar or trench techniques must compromise between manufacturability, performance, and/or reliability. GeneSiC’s patented trench-assisted planar gate design is a no-compromise, next-generation solution; high-yield manufacturing, fast and cool operation, and extended, long-life reliability.

Efficient, cost-effective power conversion relies on a comprehensive understanding of modern circuit topologies and high-speed (frequency) switching techniques. There are two main device factors:

•How well does the MOSFET conduct current (measured in R_DS(ON))?

•How efficiently does the device ‘switch’ (measured by energy loss, or E_XX)?

For each question, we must understand the answer in both ‘hard-switch’ and ‘soft-switch’ topologies, and under tough high-temperature and high-speed conditions. Combined, a high-temperature, high-speed (frequency) figure-of-merit (FoM) is critical for system performance and reliability. GeneSiC patented trench-assisted planar-gate technology delivers the lowest R_DS(ON) at high temperature and the lowest energy losses at high speeds. This enables unprecedented, industry-leading levels of performance, robustness and quality.

Gen 3 ‘Fast’ SiC MOSFETs

GeneSiC’s 3rd generation of fast (G3F) SiC MOSFETs improves switching performance and system efficiency: •Optimized EMI

•Low V_F and Q_RR

•Robust body diode

•Cooler operation

•100% avalanche (UIL) tested

•Ultra-low R_DS(ON) vs. temperature dependency

Target applications include EV charging, solar inverters, data center and telecom power supplies, and energy storage systems (ESS).

TOLL Package for high speed, high efficiency, and high-power density systems

•Extremely low package inductance of 2nH

•Small footprint with 30% savings in PCB area compared to D2PAK

•Lower height profile, with 60% lower volume than D2PAK

•Excellent thermal properties, with 9% lower R_THJC compared to D2PAK

Widest Range of SiC MOSFETs 650 V – 6.5 kV

High Power Modules & Die Sales

GeneSiC SiCPAK™ modules and bare-die enable expanded applications ranging from 10s kW to MW in rail, EV, fast charging, industry, solar, wind and energy storage.

GeneSiC SiCPAK™ modules have been designed for superior performance and robustness, while meeting industry-standard footprint with pin-to-pin combability.

•Epoxy-Resin Potting Technology for High Reliability

•Improved Temperature Cycling

•Improved Power Cycling

•‘Gen3 Fast’ SiC MOSFETs with Industry-Leading Current Density (A/mm2)

•Optimized Low-Inductance Design with Industry-Standard Press-Fit Connections with built-in NTC and Pin-to-Pin Compatibility

GeneSiC MOSFET and diode technologies range from 650 V to 6500 V using trench-assisted planar gate technology, to provide lowest R_DS(ON) positive temperature coefficient to enable highest efficiency at real operating temperatures. Die has been optimized for different bonding and attach styles with various metallizations including aluminum and gold.