MOSFET SiC Gen-3 'Fast' transistors from Navitas Semiconductor: A New Standard of Performance for the AI and EV Industry

Introduction

The development of SiC (silicon carbide) and GaN (gallium nitride) technologies brings revolutionary changes in the electronics industry, especially in the fields of Artificial Intelligence (AI) and Electric Vehicles (EV). Navitas Semiconductor, a leader in next-generation semiconductor production, introduces the MOSFET SiC Gen-3 'Fast' (G3F) transistors to the market, promising to set a new performance standard for these sectors.

Performance Need in AI and EV

The increasing interest in Artificial Intelligence and Electric Mobility poses new challenges related to energy efficiency and power density. The MOSFET SiC Gen-3 'Fast' transistors from Navitas Semiconductor address these needs, offering exceptional performance and reliability.

MOSFET SiC Gen-3 'Fast' Transistor Technology

G3F transistors utilize advanced 'Trench-Assist Planar' technology, bringing numerous benefits:

• Low RDS(ON) vs. temperature: This technology allows extremely low increase in RDS(ON) with temperature rise, resulting in the lowest power losses over the entire operating range. In real operating conditions at high temperatures, it offers up to 20% lower RDS(ON) compared to the competition.

• 100% avalanche tested (UIL): All GeneSiC MOSFET transistors feature the highest published energy excess handling capability in fault conditions, ensuring their reliability and safety.

• Longer short-circuit withstand time: They offer 30% longer short-circuit withstand time, increasing their durability and safety in high-power applications.

• Narrow threshold voltage distribution: This allows transistors to be easily paralleled, which is ideal for high-power applications and rapid market introduction.

Applications of G3F Transistors

The cooperation of G3F transistors with AI Data Centers enables increasing the power of power supply units and improving power density. In the electric mobility sector, G3F transistors support fast EV chargers and roadside charging infrastructure, improving efficiency and speeding up the charging process.

Advantages of G3F Transistors

MOSFET SiC Gen-3 'Fast' transistors offer exceptional performance and efficiency, making them an ideal solution for high-power and high-load systems. Additionally, they feature longer lifespan and resistance to extreme working conditions.

Future of SiC Technology in AI and EV

The prospects for SiC technology development in the context of future AI and EV needs are promising. MOSFET SiC Gen-3 'Fast' transistors from Navitas Semiconductor can play a key role in further development of these sectors by providing reliability, performance, and energy efficiency.

Summary

MOSFET SiC Gen-3 'Fast' transistors from Navitas Semiconductor represent a breakthrough in semiconductor technology, offering significant benefits for AI and EV applications. With advanced technology and excellent performance, they are the perfect choice for future energy solutions.