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HMSR is a next-generation, high-isolation integrated current sensor from LEM. This product family offers a robust, compact, and exceptionally precise solution for measuring both direct (DC) and alternating (AC) currents in demanding switched-mode power applications used in commercial and industrial sectors.
HMSR is an open-loop sensor based on a micro magnetic core, featuring reinforced insulation and an overcurrent detection function (configurable by the user or factory-set). These characteristics make it suitable for high-voltage applications requiring high precision and strong resistance to external interference fields. The primary conductor (pins 1 and 8) is designed with ultra-low electrical resistance and specially engineered pads that withstand high-amplitude current surges, such as lightning strikes.
HMSR measures the magnetic field generated by the current flowing through the copper track of the primary conductor. Thanks to the micro magnetic core, the sensor exhibits high immunity to external interference fields, making it ideal for power electronics applications exposed to strong electromagnetic disturbances. The reinforced insulation between the primary circuit (pins 1 and 8) and the secondary circuit (pins 9 to 15) makes HMSR a compact and cost-effective high-side current measurement solution compared to resistive solutions requiring galvanic isolation.
Parameter | Value |
---|---|
Maximum supply voltage | 8V |
Maximum supply voltage (operating; -40÷125°C) | 6.5V |
Electrostatic discharge voltage (HBM) | 2kV |
Electrostatic discharge voltage (CDM) | 500V |
Maximum output source current | 25mA |
Maximum input current consumption | 50mA |
Maximum junction temperature | 150°C |
Operating temperature | -40÷125°C |
Storage temperature | -55÷165°C |
Mass | 1.4g |
Rated primary current Ip | 20A |
Primary current measurement range | ±50A |
Internal reference voltage for Ip=0 | 2.5V |
DC supply voltage | 5V |
DC current consumption | 20mA |
Nominal sensitivity | 40 mV/A (for nominal current 800mV) |
Sensitivity error | ±0.75% |
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HMSR is a next-generation, high-isolation integrated current sensor from LEM. This product family offers a robust, compact, and exceptionally precise solution for measuring both direct (DC) and alternating (AC) currents in demanding switched-mode power applications used in commercial and industrial sectors.
HMSR is an open-loop sensor based on a micro magnetic core, featuring reinforced insulation and an overcurrent detection function (configurable by the user or factory-set). These characteristics make it suitable for high-voltage applications requiring high precision and strong resistance to external interference fields. The primary conductor (pins 1 and 8) is designed with ultra-low electrical resistance and specially engineered pads that withstand high-amplitude current surges, such as lightning strikes.
HMSR measures the magnetic field generated by the current flowing through the copper track of the primary conductor. Thanks to the micro magnetic core, the sensor exhibits high immunity to external interference fields, making it ideal for power electronics applications exposed to strong electromagnetic disturbances. The reinforced insulation between the primary circuit (pins 1 and 8) and the secondary circuit (pins 9 to 15) makes HMSR a compact and cost-effective high-side current measurement solution compared to resistive solutions requiring galvanic isolation.
Parameter | Value |
---|---|
Maximum supply voltage | 8V |
Maximum supply voltage (operating; -40÷125°C) | 6.5V |
Electrostatic discharge voltage (HBM) | 2kV |
Electrostatic discharge voltage (CDM) | 500V |
Maximum output source current | 25mA |
Maximum input current consumption | 50mA |
Maximum junction temperature | 150°C |
Operating temperature | -40÷125°C |
Storage temperature | -55÷165°C |
Mass | 1.4g |
Rated primary current Ip | 20A |
Primary current measurement range | ±50A |
Internal reference voltage for Ip=0 | 2.5V |
DC supply voltage | 5V |
DC current consumption | 20mA |
Nominal sensitivity | 40 mV/A (for nominal current 800mV) |
Sensitivity error | ±0.75% |
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