G2R1000MT33J MOSFET SiC
  • G2R1000MT33J MOSFET SiC

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Manufacturer: GeneSiC Semiconductor

G2R1000MT33J SiC MOSFET transistor

  • G2R1000MT33J
  • Housing type TO-263-7
  • Continous current ID at Tc=25oC 5 A
  • Continous current ID at Tc=100oC 3 A
  • RDS(ON) for VGS = 18 V 1000 mΩ
  • RDS(ON) for VGS = 15 V -
  • Voltage UDS 3300 V

The "G2R1000MT33J" SiC MOSFET transistor is made using GeneSiC's patented Trench-Assisted Planar technology.

Features:

  • Low Temperature Coefficient of RDS(ON)
  • Lower QG and Smaller RG(INT)
  • Low Device Capacitances (COSS, CRSS)
  • LoRing – Electromagnetically Optimazed Design
  • Robust Body Diode with Low VF and Low QRR
  • 100% Avalanche (UIL) Tested

Applications:

  • Solar Inverters
  • EV/HEV Charging
  • Motor Drives
  • High Voltage DC-DC Converters
  • Switched Mode Power Supplies
  • UPS
  • Smart Grid Transmission and Distribution
  • Induction Heating and Welding
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54.70 PLN
54.70 PLN Gross price / pcs.
44.47 PLN Net price / pc.
Tax included

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  • Housing type TO-263-7
  • Continous current ID at Tc=25oC 5 A
  • Continous current ID at Tc=100oC 3 A
  • RDS(ON) for VGS = 18 V 1000 mΩ
  • RDS(ON) for VGS = 15 V -
  • Voltage UDS 3300 V

The "G2R1000MT33J" SiC MOSFET transistor is made using GeneSiC's patented Trench-Assisted Planar technology.

Features:

  • Low Temperature Coefficient of RDS(ON)
  • Lower QG and Smaller RG(INT)
  • Low Device Capacitances (COSS, CRSS)
  • LoRing – Electromagnetically Optimazed Design
  • Robust Body Diode with Low VF and Low QRR
  • 100% Avalanche (UIL) Tested

Applications:

  • Solar Inverters
  • EV/HEV Charging
  • Motor Drives
  • High Voltage DC-DC Converters
  • Switched Mode Power Supplies
  • UPS
  • Smart Grid Transmission and Distribution
  • Induction Heating and Welding
Less
Read more