Photos are for informational purposes only. View product specification

please use latin characters

Manufacturer: GeneSiC Semiconductor

G3F33MT06J SiC MOSFET transistor

  • G3F33MT06J
  • Housing type TO-263-7
  • Continous current ID at Tc=25oC
  • Continous current ID at Tc=100oC 55 A
  • RDS(ON) for VGS = 18 V 33 mΩ
  • RDS(ON) for VGS = 15 V -
  • Voltage UDS 650 V

The "G3F33MT06J" SiC MOSFET transistor is made using GeneSiC's patented Trench-Assisted Planar technology.

Features:

  • Low Temperature Coefficient of RDS(ON)
  • Lower QG and Smaller RG(INT)
  • Low Device Capacitances (COSS, CRSS)
  • LoRing – Electromagnetically Optimazed Design
  • Robust Body Diode with Low VF and Low QRR
  • 100% Avalanche (UIL) Tested

Applications:

  • Solar Inverters
  • EV/HEV Charging
  • Motor Drives
  • High Voltage DC-DC Converters
  • Switched Mode Power Supplies
  • UPS
  • Smart Grid Transmission and Distribution
  • Induction Heating and Welding
Less
Read more

Send an inquiry

Are you interested in this product? Do you need additional information or individual pricing?

Contact us
ASK FOR THE PRODUCT close
Message sent successfully.
ASK FOR THE PRODUCT close
Browse

Add to Wishlist

You must be logged in

  • Housing type TO-263-7
  • Continous current ID at Tc=25oC
  • Continous current ID at Tc=100oC 55 A
  • RDS(ON) for VGS = 18 V 33 mΩ
  • RDS(ON) for VGS = 15 V -
  • Voltage UDS 650 V

The "G3F33MT06J" SiC MOSFET transistor is made using GeneSiC's patented Trench-Assisted Planar technology.

Features:

  • Low Temperature Coefficient of RDS(ON)
  • Lower QG and Smaller RG(INT)
  • Low Device Capacitances (COSS, CRSS)
  • LoRing – Electromagnetically Optimazed Design
  • Robust Body Diode with Low VF and Low QRR
  • 100% Avalanche (UIL) Tested

Applications:

  • Solar Inverters
  • EV/HEV Charging
  • Motor Drives
  • High Voltage DC-DC Converters
  • Switched Mode Power Supplies
  • UPS
  • Smart Grid Transmission and Distribution
  • Induction Heating and Welding
Less
Read more