Noticias

W dzisiejszych czasach energia słoneczna stanowi znaczący element globalnych wysiłków na rzecz zrównoważonego rozwoju i walki z wyzwaniami związanymi z zmianami klimatycznymi. Panele słoneczne, zwłaszcza te fotowoltaiczne, stały się popularnym rozwiązaniem w produkcji czystej energii elektrycznej.

Fotowoltaika odgrywa kluczową rolę w dostarczaniu czystej energii elektrycznej, ale jednym z jej wyzwań jest niestabilność produkcji wynikająca z warunków pogodowych.

Fotowoltaika, czyli produkcja energii elektrycznej za pomocą promieniowania słonecznego, stanowi kluczowy element walki z wyzwaniami związanymi ze zmianami klimatycznymi i ochrony środowiska.

La fotovoltaica es un campo que desempeña un papel crucial en la generación de energía eléctrica sostenible. Uno de los componentes clave de los sistemas fotovoltaicos es el panel solar.

Porównanie SILIGAINE 15C5 a SILIKONOWYCH KOSZULEK ELEKTROIZOLACYJNYCH (OSKS): Które są najlepsze dla Twoich zastosowań? W dzisiejszych czasach wybór odpowiedniego materiału izolacyjnego jest kluczowy w wielu dziedzinach przemysłu elektrotechnicznego. Dla klientów, którzy potrzebują niezawodnej izolacji przewodów, dwie popularne opcje, SILIGAINE 15C5 i SILIKONOWE KOSZULKI ELEKTROIZOLACYJNE (OSKS), oferują wiele zalet. W tym artykule dokładnie przyjrzymy się tym dwóm produktom, porównując ich...

We would like to present to you the LR Series as a perfect example of quality in the field of lighting and sound. This product series serves as a distinct response to the needs of users seeking excellent lighting and exceptional sound quality in the lighting and acoustic industry.

The evolution of SiC technology in power modules and its principle loss reduction potential are shown in Figure 1. Mitsubishi has developed two new full SiC module types with 800A and 1200A rated currents and 1200V rated voltage [1]; [2]. This article is describing the 800A module.

Power conversion applications have always had to deliver high performance while maintaining the required quality of power. The harmonic profile of the output power can be improved by increasing the switching frequency. However, an increase in switching frequency compromises the inverter efficiency. Historically, the conventional 2-level inverters have served the industry with its seemingly uncomplicated topology where developers have always had to strike a balance between efficiency and...

On 29th Sep. 2015 MITSUBISHI ELECTRIC CORPORATION launched the first product of the new high voltage IGBT X-Series product family [1] - the IGBT module with a blocking voltage of 6500 V and a rated current of 1000 A. CM1000HG-130XA is the highest rated device in the industry for this voltage class (operating temperature of 150 °C). A key design aspect of the X-Series is the combination of the already well know and proven R-Series package technology with the newly developed 7th generation IGBT...

Major applications using 3300 V IGBT modules like traction, medium voltage drives or power transmission & distribution require an absolute minimization of the number of fi eld failures. Taking into consideration all possible worst case application conditions, it must be ensured that the device must be operated safely inside the technical specifi cation. But in reality, it is sometimes impossible to predict all the worst case conditions which might occur during an actual fi eld operation....

The power module topology is half bridge. The main intention for creating such dual power module is reducing the module’s internal stray inductance. In order to minimize the internal voltage spike – one of the bottlenecks for keeping the RBSOA at maximum inverter output current. Each new chip generation shows increased current switching slope di/dt causing higher overvoltage spikes inside the package if the power module’s stray inductance would be kept constant. The issue becomes even more...

Today’s SiC power modules from Mitsubishi Electric (see Figure1) are belonging to the first phase of SiC-commercialization that had started around 2010.

PI’s new SCALE-iFlex LT NTC family of IGBT/SiC module gate drivers provides Negative Temperature Coefficient (NTC) data, which enables accurate thermal management of converter systems and ensures proper current sharing. They dramatically enhance the overall system reliability of renewable energy and rail systems with multiple modules arrayed in parallel.

The text aims to provide practical guidance for individuals who are faced with the need to assess safety requirements in industrial plants where large quantities of combustible solid particles (dusts) are processed. From a process safety perspective, it is essential that the dust be examined to determine the type of risk involved. Which dusts should be tested? What tests are required? When can values obtained from published sources be used? These are some of the issues that will be addressed...

Originally, Mitsubishi Electric started the development of the 4500V IGBTs in the middle of 90s. The first commercialization of standard IGBT modules in this voltage class was started in beginning of 2000s. It was a more efficient and compact solution compared to existing 4500V GTO press pack devices. Mainly this development was driven by railway and medium-voltage (MV) drive applications. Meanwhile, a wide variation of the 4500V IGBT modules is available, such as: dual diode modules, modules...

Power semiconductor devices made of silicon carbide (SiC) are regarded as the major innovation in modern power electronics. Compared to classical silicon (Si) devices, SiC enables more efficient and more compact converters to save electric energy and valuable materials.

With increasing complexity and the growing number of electronic devices, the need to ensure the harmonious functioning and coexistence of these devices becomes more and more important. Hence, it is essential to emphasize the significance of Electromagnetic Compatibility. Here are a few key aspects that highlight its importance:

The research activities on SiC are coordinated in Japan by an organization called NEDO (New Energy and Industrial Development Organization). NEDO is Japan’s largest public R&D management organization for coordinating the innovation efforts in strategic directions. The development of high power density and high withstand voltage SiC power modules is one of NEDO’s main R&D directions and Mitsubishi Electric is a key player in this activity [2]. Several outstanding Mitsubishi Electric...