6 generación de módulos de IPM Full Gate -Seria V1
  • 6 generación de módulos de IPM Full Gate -Seria V1

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Fabricante: Mitsubishi

6 generación de módulos de IPM Full Gate -Seria V1

Technical Data
- Low power losses because of Full Gate CSTBT usage
- 600 V : VCE(sat) ( @Tj =125O C) = 1,75V - 1200 V : VCE(sat)@Tj =125O C) = 1,85V
- Increased resistance for temperature cycles
• Mechanical compatibility with V series (small casings)
• Short circuit protection(S.C.)
• Under voltage protection(UV)
• Temperature protection (FO)

 
Symbol Scheme VCES
[V]
IC[A]
200 300 400 450 600
D 6th generation of IPM modules - FULL GATE V1 series 1200    

PM400DV1A060

 

PM600DV1A060

1200

PM200DV1A120

PM300DV1A120

 

PM450DV1A120

 


Casing V1
Circuit scheme
6th generation of IPM modules - FULL GATE V1 series casing 6th generation of IPM modules - FULL GATE V1 series scheme

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Technical Data
- Low power losses because of Full Gate CSTBT usage
- 600 V : VCE(sat) ( @Tj =125O C) = 1,75V - 1200 V : VCE(sat)@Tj =125O C) = 1,85V
- Increased resistance for temperature cycles
• Mechanical compatibility with V series (small casings)
• Short circuit protection(S.C.)
• Under voltage protection(UV)
• Temperature protection (FO)

 
Symbol Scheme VCES
[V]
IC[A]
200 300 400 450 600
D 6th generation of IPM modules - FULL GATE V1 series 1200    

PM400DV1A060

 

PM600DV1A060

1200

PM200DV1A120

PM300DV1A120

 

PM450DV1A120

 


Casing V1
Circuit scheme
6th generation of IPM modules - FULL GATE V1 series casing 6th generation of IPM modules - FULL GATE V1 series scheme
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