G3r160mt17d mosfet sic
  • G3r160mt17d mosfet sic

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G3r160mt17d mosfet sic

  • G3R160MT17D
  • Tipo de vivienda TO-247-3
  • Continous currentID at Tc=25oC
  • Corriente continua I D en Tc = 100 o C -
  • RDS(ON) para VGS = 18 V -
  • RDS(ON) para VGS = 15 V 160 mΩ
  • Voltaje UDS 1700 V

The "G3R160MT17D" SiC MOSFET transistor is made using GeneSiC's patented Trench-Assisted Planar technology.

Features:

  • Low Temperature Coefficient of RDS(ON)
  • Lower QG and Smaller RG(INT)
  • Low Device Capacitances (COSS, CRSS)
  • LoRing – Electromagnetically Optimazed Design
  • Robust Body Diode with Low VF and Low QRR
  • 100% Avalanche (UIL) Tested

Applications:

  • Solar Inverters
  • EV/HEV Charging
  • Motor Drives
  • High Voltage DC-DC Converters
  • Switched Mode Power Supplies
  • UPS
  • Smart Grid Transmission and Distribution
  • Induction Heating and Welding
47,99 PLN
47,99 PLN Precio bruto / uds.
39,02 PLN Precio neto / pz.
Impuestos incluidos
Disponibilidad: Disponible Cantidad, piezas: 600
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  • Tipo de vivienda TO-247-3
  • Continous currentID at Tc=25oC
  • Corriente continua I D en Tc = 100 o C -
  • RDS(ON) para VGS = 18 V -
  • RDS(ON) para VGS = 15 V 160 mΩ
  • Voltaje UDS 1700 V

The "G3R160MT17D" SiC MOSFET transistor is made using GeneSiC's patented Trench-Assisted Planar technology.

Features:

  • Low Temperature Coefficient of RDS(ON)
  • Lower QG and Smaller RG(INT)
  • Low Device Capacitances (COSS, CRSS)
  • LoRing – Electromagnetically Optimazed Design
  • Robust Body Diode with Low VF and Low QRR
  • 100% Avalanche (UIL) Tested

Applications:

  • Solar Inverters
  • EV/HEV Charging
  • Motor Drives
  • High Voltage DC-DC Converters
  • Switched Mode Power Supplies
  • UPS
  • Smart Grid Transmission and Distribution
  • Induction Heating and Welding
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