G3R40MT12K MOSFET SiC
  • G3R40MT12K MOSFET SiC

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G3R40MT12K MOSFET SiC

  • G3R40MT12K
  • Tipo de vivienda TO-247-4
  • Continous currentID at Tc=25oC 69 A
  • Corriente continua I D en Tc = 100 o C 36 A
  • RDS(ON) para VGS = 18 V 34 mΩ
  • RDS(ON) para VGS = 15 V 40 mΩ
  • Voltaje UDS 1200 V
Nuevo

The "G3R40MT12K" SiC MOSFET transistor is made using GeneSiC's patented Trench-Assisted Planar technology.

Features:

  • Low Temperature Coefficient of RDS(ON)
  • Lower QG and Smaller RG(INT)
  • Low Device Capacitances (COSS, CRSS)
  • LoRing – Electromagnetically Optimazed Design
  • Robust Body Diode with Low VF and Low QRR
  • 100% Avalanche (UIL) Tested

Applications:

  • Solar Inverters
  • EV/HEV Charging
  • Motor Drives
  • High Voltage DC-DC Converters
  • Switched Mode Power Supplies
  • UPS
  • Smart Grid Transmission and Distribution
  • Induction Heating and Welding
71,34 PLN
71,34 PLN Precio bruto / uds.
58,00 PLN Precio neto / pz.
Impuestos incluidos
Disponibilidad: Disponible Cantidad, piezas: 46
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  • Tipo de vivienda TO-247-4
  • Continous currentID at Tc=25oC 69 A
  • Corriente continua I D en Tc = 100 o C 36 A
  • RDS(ON) para VGS = 18 V 34 mΩ
  • RDS(ON) para VGS = 15 V 40 mΩ
  • Voltaje UDS 1200 V
Nuevo

The "G3R40MT12K" SiC MOSFET transistor is made using GeneSiC's patented Trench-Assisted Planar technology.

Features:

  • Low Temperature Coefficient of RDS(ON)
  • Lower QG and Smaller RG(INT)
  • Low Device Capacitances (COSS, CRSS)
  • LoRing – Electromagnetically Optimazed Design
  • Robust Body Diode with Low VF and Low QRR
  • 100% Avalanche (UIL) Tested

Applications:

  • Solar Inverters
  • EV/HEV Charging
  • Motor Drives
  • High Voltage DC-DC Converters
  • Switched Mode Power Supplies
  • UPS
  • Smart Grid Transmission and Distribution
  • Induction Heating and Welding
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