G3R75MT12J MOSFET SiC
  • G3R75MT12J MOSFET SiC

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Fabricante: GeneSiC Semiconductor

G3r75mt12j mosfet sic

  • G3R75MT12J
  • Tipo de vivienda TO-263-7
  • Continous currentID at Tc=25oC 38 A
  • Corriente continua I D en Tc = 100 o C 27 A
  • RDS(ON) para VGS = 18 V 64 mΩ
  • RDS(ON) para VGS = 15 V 75 mΩ
  • Voltaje UDS 1200 V

The "G3R75MT12J" SiC MOSFET transistor is made using GeneSiC's patented Trench-Assisted Planar technology.

Features:

  • Low Temperature Coefficient of RDS(ON)
  • Lower QG and Smaller RG(INT)
  • Low Device Capacitances (COSS, CRSS)
  • LoRing – Electromagnetically Optimazed Design
  • Robust Body Diode with Low VF and Low QRR
  • 100% Avalanche (UIL) Tested

Applications:

  • Solar Inverters
  • EV/HEV Charging
  • Motor Drives
  • High Voltage DC-DC Converters
  • Switched Mode Power Supplies
  • UPS
  • Smart Grid Transmission and Distribution
  • Induction Heating and Welding
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Lee mas
47,97 PLN
47,97 PLN Precio bruto / uds.
39,00 PLN Precio neto / pz.
Impuestos incluidos
Disponibilidad: Disponible Cantidad, piezas: 30
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  • Tipo de vivienda TO-263-7
  • Continous currentID at Tc=25oC 38 A
  • Corriente continua I D en Tc = 100 o C 27 A
  • RDS(ON) para VGS = 18 V 64 mΩ
  • RDS(ON) para VGS = 15 V 75 mΩ
  • Voltaje UDS 1200 V

The "G3R75MT12J" SiC MOSFET transistor is made using GeneSiC's patented Trench-Assisted Planar technology.

Features:

  • Low Temperature Coefficient of RDS(ON)
  • Lower QG and Smaller RG(INT)
  • Low Device Capacitances (COSS, CRSS)
  • LoRing – Electromagnetically Optimazed Design
  • Robust Body Diode with Low VF and Low QRR
  • 100% Avalanche (UIL) Tested

Applications:

  • Solar Inverters
  • EV/HEV Charging
  • Motor Drives
  • High Voltage DC-DC Converters
  • Switched Mode Power Supplies
  • UPS
  • Smart Grid Transmission and Distribution
  • Induction Heating and Welding
Menos
Lee mas