G3R60MT07D MOSFET SIC.
  • G3R60MT07D MOSFET SIC.

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Gamintojas: GeneSiC Semiconductor

G3R60MT07D MOSFET SIC.

  • G3R60MT07D
  • Korpuso tipas TO-247-3
  • Pastovi srovė ID kai Tc=25oC 43 A
  • Pastovi srovė IDkai Tc=100oC 30 A
  • RDS(ON) kai VGS = 18 V -
  • RDS(ON) kai VGS = 15 V 60 mΩ
  • UDS įtampa 750 V
Nauja

The "G3R60MT07D" SiC MOSFET transistor is made using GeneSiC's patented Trench-Assisted Planar technology.

Features:

  • Low Temperature Coefficient of RDS(ON)
  • Lower QG and Smaller RG(INT)
  • Low Device Capacitances (COSS, CRSS)
  • LoRing – Electromagnetically Optimazed Design
  • Robust Body Diode with Low VF and Low QRR
  • 100% Avalanche (UIL) Tested

Applications:

  • Solar Inverters
  • EV/HEV Charging
  • Motor Drives
  • High Voltage DC-DC Converters
  • Switched Mode Power Supplies
  • UPS
  • Smart Grid Transmission and Distribution
  • Induction Heating and Welding
mažiau
Skaityk daugiau
34,44 PLN
34,44 PLN Bendroji kaina / vnt.
28,00 PLN Grynoji kaina / vnt.
Su PVM
Prieinamumas: Prieinama kiekis vnt: 6000
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  • Korpuso tipas TO-247-3
  • Pastovi srovė ID kai Tc=25oC 43 A
  • Pastovi srovė IDkai Tc=100oC 30 A
  • RDS(ON) kai VGS = 18 V -
  • RDS(ON) kai VGS = 15 V 60 mΩ
  • UDS įtampa 750 V
Nauja

The "G3R60MT07D" SiC MOSFET transistor is made using GeneSiC's patented Trench-Assisted Planar technology.

Features:

  • Low Temperature Coefficient of RDS(ON)
  • Lower QG and Smaller RG(INT)
  • Low Device Capacitances (COSS, CRSS)
  • LoRing – Electromagnetically Optimazed Design
  • Robust Body Diode with Low VF and Low QRR
  • 100% Avalanche (UIL) Tested

Applications:

  • Solar Inverters
  • EV/HEV Charging
  • Motor Drives
  • High Voltage DC-DC Converters
  • Switched Mode Power Supplies
  • UPS
  • Smart Grid Transmission and Distribution
  • Induction Heating and Welding
mažiau
Skaityk daugiau

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