G3R75MT12J MOSFET SIC.
  • G3R75MT12J MOSFET SIC.

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Gamintojas: GeneSiC Semiconductor

G3R75MT12J MOSFET SIC.

  • G3R75MT12J
  • Korpuso tipas TO-263-7
  • Pastovi srovė ID kai Tc=25oC 38 A
  • Pastovi srovė IDkai Tc=100oC 27 A
  • RDS(ON) kai VGS = 18 V 64 mΩ
  • RDS(ON) kai VGS = 15 V 75 mΩ
  • UDS įtampa 1200 V
Nauja

The "G3R75MT12J" SiC MOSFET transistor is made using GeneSiC's patented Trench-Assisted Planar technology.

Features:

  • Low Temperature Coefficient of RDS(ON)
  • Lower QG and Smaller RG(INT)
  • Low Device Capacitances (COSS, CRSS)
  • LoRing – Electromagnetically Optimazed Design
  • Robust Body Diode with Low VF and Low QRR
  • 100% Avalanche (UIL) Tested

Applications:

  • Solar Inverters
  • EV/HEV Charging
  • Motor Drives
  • High Voltage DC-DC Converters
  • Switched Mode Power Supplies
  • UPS
  • Smart Grid Transmission and Distribution
  • Induction Heating and Welding
mažiau
Skaityk daugiau
43,05 PLN
43,05 PLN Bendroji kaina / vnt.
35,00 PLN Grynoji kaina / vnt.
Su PVM
Prieinamumas: Prieinama kiekis vnt: 30
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  • Korpuso tipas TO-263-7
  • Pastovi srovė ID kai Tc=25oC 38 A
  • Pastovi srovė IDkai Tc=100oC 27 A
  • RDS(ON) kai VGS = 18 V 64 mΩ
  • RDS(ON) kai VGS = 15 V 75 mΩ
  • UDS įtampa 1200 V
Nauja

The "G3R75MT12J" SiC MOSFET transistor is made using GeneSiC's patented Trench-Assisted Planar technology.

Features:

  • Low Temperature Coefficient of RDS(ON)
  • Lower QG and Smaller RG(INT)
  • Low Device Capacitances (COSS, CRSS)
  • LoRing – Electromagnetically Optimazed Design
  • Robust Body Diode with Low VF and Low QRR
  • 100% Avalanche (UIL) Tested

Applications:

  • Solar Inverters
  • EV/HEV Charging
  • Motor Drives
  • High Voltage DC-DC Converters
  • Switched Mode Power Supplies
  • UPS
  • Smart Grid Transmission and Distribution
  • Induction Heating and Welding
mažiau
Skaityk daugiau

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