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A novel GeneSiC Merged-PiN Schottky design combines the best features from both PiN and Schottky diode structures, producing the lowest forward voltage drop (VF), high surge-current capability (IFSM), and minimized temperature-independent switching losses. Proprietary thin-chip technology further reduces VF and improves thermal dissipation for cooler operation.
Superior Figure-of-Merit (FoM) Drives High Efficiency
Gen-5 MPS Diodes are ideal in PFC circuits in continuous-current mode (CCM) due to excellent figure of merit, comprising of a low VF of 1.3 V, minimized capacitive charge (QC). In addition, zero reverse recovery charge improves PFC MOSFET turn-on performance. The result is a cooler, more reliable system.
3 kW Interleaved Boost PFC
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