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Tranzistori
Categorii
- Tranzistoare | GeneSiC
- Module MOSFET SiC | Mitsubishi
- Module MOSFET SiC | STARPOWER
- Module ABB SiC MOSFET
- Module IGBT | MITSUBISHI
- Module tranzistor | MITSUBISHI
- Module MOSFET | MITSUBISHI
- Module tranzistor | ABB
- Module IGBT | POWEREX
- Module IGBT | INFINEON (EUPEC)
- Elemente semiconductoare - Carbură de siliciu (SiC)
- Module tranzistor | DYNEX
- Tranzistoare MOSFET | VISHAY (IR)
- Module MOSFET SiC | POWEREX
- Module IGBT | Semikron
- Drivere MOSFET și IGBT | Semikron
- Module MOSFET | Microsemi
- Tranzistoare IGBT | VISHAY (IR)
- Module IGBT Starpower
- Tranzistoare EPC GAN
Imagina | Vizualizați produsul | Producător nr. | |||||||||||||||||||||||||||||||||||||||||||
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SEMIKRON | Sk30dgdl07e3ete1 șapte pachet. | VEZI-L | SK30DGDL07E3ETE1 | La comandă | -- | -- | -- | -- | -- | Seven Pack | 650 V | 30 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- |
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EPC (Efficient Power Conversion) | Tranzistor EPC7019 | VEZI-L | EPC7019 | La comandă | -- | -- | -- | -- | -- | Single Rad Hard | -- | -- | -- | -- | -- | -- | -- | 1-May | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 40 | 6 | 23 | 7-Jun | 3-Apr | 51 | 95 | 530 | LGA 6.05 x 2.3 | -- | -- | -- | -- | -- |
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SEMIKRON | Semix303gb17e4p jumătate pod | VEZI-L | SEMiX303GB17E4p | La comandă | -- | -- | -- | -- | -- | Half Bridge | 1700 V | 300 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- |
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GeneSiC Semiconductor | Tranzystor SiC Mosfet G3F25MT06K | VEZI-L | G3F25MT06K | La comandă | TO-247-4 | -- | -- | -- | 100 A | -- | -- | -- | 71 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 650 V | ||
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GeneSiC Semiconductor | Tranzistor SiC Mosfet G3F33MT06L | VEZI-L | G3F33MT06L | La comandă | -- | -- | -- | 90 A | -- | -- | -- | 64 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 650 V | |||
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Mitsubishi | Elemente semiconductoare din carbură de siliciu (SiC) | VEZI-L | -- | La comandă | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- |
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SEMIKRON | Module IPM - SKiiP2/3 | VEZI-L | -- | La comandă | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- |
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GeneSiC Semiconductor | G3R60MT07K MOSFET SIC. | VEZI-L | G3R60MT07K | La comandă | TO-247-4 | -- | -- | -- | 48 A | -- | -- | -- | 34 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | - | 60 mΩ | 750 V | -- | -- |
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Mitsubishi | PSH20L91A6-A MOSFET SIC | VEZI-L | PSH20L91A6-A | La comandă | -- | -- | -- | -- | -- | Two-phase interleaved | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 20Arms V | -- | -- |
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GeneSiC Semiconductor | Tranzistor SiC Mosfet G3F135MT12J | VEZI-L | G3F135MT12J | La comandă | TO-263-7 | -- | -- | -- | 18 A | -- | -- | -- | 13 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 1200 V | -- | |
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SEMIKRON | SK 30 DGDL 066 et șapte ambalaj | VEZI-L | SK30DGDL066ET | La comandă | -- | -- | -- | -- | -- | Seven Pack | 600 V | 30 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- |
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SEMIKRON | SKM400gar176d un singur comutator | VEZI-L | SKM400GAR176D | La comandă | -- | -- | -- | -- | -- | Single Switch | 1700 V | 300 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- |
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GeneSiC Semiconductor | Tranzystor SiC Mosfet G3F25MT06J | VEZI-L | G3F25MT06J | La comandă | TO-263-7 | -- | -- | -- | -- | -- | -- | 77 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 650 V | |||
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GeneSiC Semiconductor | Tranzystor SiC Mosfet G3F45MT06K | VEZI-L | G3F45MT06K | La comandă | TO-247-4 | -- | -- | -- | 52 A | -- | -- | -- | 37 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 650 V | ||
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EPC (Efficient Power Conversion) | Tranzistor EPC7004 | VEZI-L | EPC7004 | La comandă | -- | -- | -- | -- | -- | Single Rad Hard | -- | -- | -- | -- | -- | -- | -- | 7 | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 100 | 6 | 6-Apr | 2-Feb | 1-Jan | 37 | 60 | 160 | LGA 4.1 x 1.6 | -- | -- | -- | -- | -- |
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Mitsubishi | Modul de putere inteligent de înaltă tensiune | VEZI-L | -- | La comandă | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- |
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SEMIKRON | Module IGBT - SEMITRANE | VEZI-L | -- | La comandă | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- |
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Mitsubishi | PSF25S92F6 MOSFET SIC. | VEZI-L | PSF25S92F6 | La comandă | -- | -- | -- | -- | -- | 6in1 | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 25 V | -- | -- |
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Mitsubishi | 1700V FMF600DXE-34BN | VEZI-L | FMF600DXE-34BN | La comandă | -- | -- | -- | -- | -- | 2in1 | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 1700 V | -- | -- |
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GeneSiC Semiconductor | Tranzistor SiC Mosfet G3F25MT06L | VEZI-L | G3F25MT06L | La comandă | -- | -- | -- | 125 A | -- | -- | -- | 88 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 650 V | |||
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Mitsubishi | Wysokonapięciowe moduły IGBT | VEZI-L | -- | La comandă | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- |
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Infineon | Module IGBT seria EconoPACK+ | VEZI-L | -- | La comandă | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- |
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GeneSiC Semiconductor | G3R60MT07J MOSFET SIC. | VEZI-L | G3R60MT07J | La comandă | TO-263-7 | -- | -- | -- | 44 A | -- | -- | -- | 31 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | - | 60 mΩ | 750 V | -- | -- |
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Mitsubishi | CMH150DY-24NFH MOSFET SIC | VEZI-L | CMH150DY-24NFH | La comandă | -- | -- | -- | -- | -- | 2in1 | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 150 V | -- | -- |
DACPOL is an experienced supplier of necessary products for the category of transistors. Our clients can rely on the quality of the products and services we provide, regardless of whether they buy MOSFET modules, DC diodes or silicon carbide semiconductors.
We are ready to provide you with a wholesale quantity of the products you are looking for. Regardless of whether you order single product from the transistors category or buy them in bulk quantities, we offer a comprehensive delivery of all products.
To meet the highest quality of service, we offer our clients only products from reliable suppliers and manufacturers. Our team of engineers, at every stage, serves their knowledge and advice so as to be able to provide customers with information on the maintenance and use of purchased products
The products DACPOL offers from the group of electronic components, power supply and connectors is much larger and includes various types of electrical and industrial items from the category of transistors. On our website you can familiarize yourself with the full range of products from the group of electronic components, power supply and connectors.
Field effect transistor
We offer two types of field effect transistors: MOS-FET and IGBT transistors.
MOS-FET transistors
MOS-FET transistors cooperate well in parallel connections. They can be combined in parallel up to several dozen pieces. They are easily controlled and do not require adjustment in the load current distribution between them.
They are available in the current range from 1.1A to 250A and voltages from 12V to 900V. The MOS-FET transistors are manufactured in the following types of enclosures: SO8, SOT223, D-Pak, D2-Pak, I-Pak, TO-262, TO-220, TO-247, SOT-227, HEXDIP.
IGBT transistors
IGBT transistors are characterized by a small decrease in conduction voltage (from 2.15 - 5.2V) at high current (10 - 3600A), high voltage blocking capacity (250 - 6500V), voltage control via an isolated gate and high switching speed. They are produced in the form of standard modules, high frequency modules, high voltage modules as well as intelligent modules and high voltage intelligent modules. In addition, high-voltage diode modules are offered for cooperation with IGBT transistors.
They are available in electro-insulated enclosures as single transistors, two-bridge modules (half-bridge), six-element modules (full bridge), seven-element modules (full bridge with transistor). Typical enclosures are: TO220, TO247, A1, NF1, NF2, NF3, NF4, NF5, NF6, U2, U3, U4, U5, U6, U7, U8, A1, A2, A3, A4, A5, H1, H2, H3, H4, H5, H6, H7, H8, H9, H10, H11, H12, H13, DM1, DM2, HV1, HV2, HV3, HV4, HV5, HV6, HV7, HV8, SD1, SD2, SD3, and SD4.
The IGBT transistors manufactured in the form of intelligent modules contain, besides transistors, control systems as well as short circuit and overvoltage protections.