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Categorii
- Tranzistoare | GeneSiC
- Module MOSFET SiC | Mitsubishi
- Module MOSFET SiC | STARPOWER
- Module ABB SiC MOSFET
- Module IGBT | MITSUBISHI
- Module tranzistor | MITSUBISHI
- Module MOSFET | MITSUBISHI
- Module tranzistor | ABB
- Module IGBT | POWEREX
- Module IGBT | INFINEON (EUPEC)
- Elemente semiconductoare - Carbură de siliciu (SiC)
- Module tranzistor | DYNEX
- Tranzistoare MOSFET | VISHAY (IR)
- Module MOSFET SiC | POWEREX
- Module IGBT | Semikron
- Drivere MOSFET și IGBT | Semikron
- Module MOSFET | Microsemi
- Tranzistoare IGBT | VISHAY (IR)
- Module IGBT Starpower
- Tranzistoare EPC GAN
Imagina | Vizualizați produsul | Producător nr. | |||||||||||||||||||||||||||||||||||||||||
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picture_as_pdf | SEMIKRON | SKM600GB066D Podul Half. | VEZI-L | SKM600GB066D | La comandă | -- | -- | -- | -- | -- | Half Bridge | 600 V | 600 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | |
-- | GeneSiC Semiconductor | G3F40MT12K Tranzystor SiC MOSFET | VEZI-L | G3F40MT12K | La comandă | TO-247-4 | -- | -- | -- | 61 A | -- | -- | -- | 43 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 40 mΩ | - | 1200 V | |
picture_as_pdf | ABB | Module tranzistor IGBT - ABB | VEZI-L | -- | La comandă | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | |
picture_as_pdf | Mitsubishi | 3 generația modulor IPM - seria V | VEZI-L | -- | La comandă | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | |
picture_as_pdf | Mitsubishi | Module MOSFET - MITSUBISHI | VEZI-L | -- | La comandă | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | |
picture_as_pdf | Mitsubishi | A 6-a generație de module IGBT - seria NX | VEZI-L | -- | La comandă | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | |
picture_as_pdf | GeneSiC Semiconductor | G3R60MT07J MOSFET SIC. | VEZI-L | G3R60MT07J | La comandă | TO-263-7 | -- | -- | -- | 44 A | -- | -- | -- | 31 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | - | 60 mΩ | 750 V | |
picture_as_pdf | Mitsubishi | PSF15S92F6 MOSFET SIC. | VEZI-L | PSF15S92F6 | La comandă | -- | -- | -- | -- | -- | 6in1 | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 15 V | |
-- | GeneSiC Semiconductor | G3F75MT12J Tranzystor SiC MOSFET | VEZI-L | G3F75MT12J | La comandă | TO-263-7 | -- | -- | -- | 39 A | -- | -- | -- | 28 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 75 mΩ | - | 1200 V | |
picture_as_pdf | EPC (Efficient Power Conversion) | Tranzistor EPC2304 | VEZI-L | EPC2304 | La comandă | -- | -- | -- | -- | -- | Single | -- | -- | -- | -- | -- | -- | -- | 5 | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 200 | 6 | 21 | 7-May | 2-Jun | 115 | 102 | 260 | QFN 3 x 5 | -- | -- | -- | |
picture_as_pdf | EPC (Efficient Power Conversion) | Tranzistor EPC23103 | VEZI-L | EPC23103 | La comandă | -- | -- | -- | -- | -- | Half Bridge ePower Stage | -- | -- | -- | -- | -- | -- | -- | 7-Jun | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 100 | 6 | -- | -- | -- | 21, 22.95 | 25 | 109 | QFN 3.5 x 5 | -- | -- | -- | |
picture_as_pdf | SEMIKRON | SKM200GB12F4 Podul Jumătate | VEZI-L | SKM200GB12F4 | La comandă | -- | -- | -- | -- | -- | Half Bridge | 1200 V | 200 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | |
-- | Mitsubishi | Dipipm TM 600V & 1200V | VEZI-L | -- | La comandă | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | |
picture_as_pdf | POWEREX | Modul dublu HVIGBT QID3320004 | VEZI-L | -- | La comandă | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | |
-- | POWEREX | Module IGBT - Firma Powerex | VEZI-L | -- | La comandă | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | |
-- | Mitsubishi | 3 generația modulelor IPM - seria S | VEZI-L | -- | La comandă | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | |
picture_as_pdf | Mitsubishi | a 3-a generație de module DIP și MINI DIP IPM | VEZI-L | -- | La comandă | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | |
picture_as_pdf | POWEREX | Module SIC MOSFET - POWEREX | VEZI-L | -- | La comandă | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | |
picture_as_pdf | Mitsubishi | CMH600DC-66X MOSFET SIC | VEZI-L | CMH600DC-66X | La comandă | -- | -- | -- | -- | -- | 2in1 | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 600 V | |
picture_as_pdf | Vishay | Tranzistoare MOSFET - firma VISHAY (IR) | VEZI-L | -- | La comandă | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | |
picture_as_pdf | SEMIKRON | SK35DGDL12T7ETE2S Seven pachet | VEZI-L | SK35DGDL12T7ETE2s | La comandă | -- | -- | -- | -- | -- | Seven Pack | 1200 V | 35 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | |
picture_as_pdf | SEMIKRON | SKM75GB17E4H16 Podul Half. | VEZI-L | SKM75GB17E4H16 | La comandă | -- | -- | -- | -- | -- | Half Bridge | 1700 V | 75 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | |
-- | GeneSiC Semiconductor | G3F75MT12K Tranzystor SiC MOSFET | VEZI-L | G3F75MT12K | La comandă | TO-247-4 | -- | -- | -- | 35 A | -- | -- | -- | 25 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 75 mΩ | - | 1200 V | |
-- | Mitsubishi | Module CI / CIB | VEZI-L | -- | La comandă | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- |
DACPOL is an experienced supplier of necessary products for the category of transistors. Our clients can rely on the quality of the products and services we provide, regardless of whether they buy MOSFET modules, DC diodes or silicon carbide semiconductors.
We are ready to provide you with a wholesale quantity of the products you are looking for. Regardless of whether you order single product from the transistors category or buy them in bulk quantities, we offer a comprehensive delivery of all products.
To meet the highest quality of service, we offer our clients only products from reliable suppliers and manufacturers. Our team of engineers, at every stage, serves their knowledge and advice so as to be able to provide customers with information on the maintenance and use of purchased products
The products DACPOL offers from the group of electronic components, power supply and connectors is much larger and includes various types of electrical and industrial items from the category of transistors. On our website you can familiarize yourself with the full range of products from the group of electronic components, power supply and connectors.
Field effect transistor
We offer two types of field effect transistors: MOS-FET and IGBT transistors.
MOS-FET transistors
MOS-FET transistors cooperate well in parallel connections. They can be combined in parallel up to several dozen pieces. They are easily controlled and do not require adjustment in the load current distribution between them.
They are available in the current range from 1.1A to 250A and voltages from 12V to 900V. The MOS-FET transistors are manufactured in the following types of enclosures: SO8, SOT223, D-Pak, D2-Pak, I-Pak, TO-262, TO-220, TO-247, SOT-227, HEXDIP.
IGBT transistors
IGBT transistors are characterized by a small decrease in conduction voltage (from 2.15 - 5.2V) at high current (10 - 3600A), high voltage blocking capacity (250 - 6500V), voltage control via an isolated gate and high switching speed. They are produced in the form of standard modules, high frequency modules, high voltage modules as well as intelligent modules and high voltage intelligent modules. In addition, high-voltage diode modules are offered for cooperation with IGBT transistors.
They are available in electro-insulated enclosures as single transistors, two-bridge modules (half-bridge), six-element modules (full bridge), seven-element modules (full bridge with transistor). Typical enclosures are: TO220, TO247, A1, NF1, NF2, NF3, NF4, NF5, NF6, U2, U3, U4, U5, U6, U7, U8, A1, A2, A3, A4, A5, H1, H2, H3, H4, H5, H6, H7, H8, H9, H10, H11, H12, H13, DM1, DM2, HV1, HV2, HV3, HV4, HV5, HV6, HV7, HV8, SD1, SD2, SD3, and SD4.
The IGBT transistors manufactured in the form of intelligent modules contain, besides transistors, control systems as well as short circuit and overvoltage protections.