G3R60MT07D MOSFET SiC
  • G3R60MT07D MOSFET SiC

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G3R60MT07D MOSFET SIC.

  • G3R60MT07D
  • Tipul carcasei TO-247-3
  • Curent continuu ID la Tc=25oC 43 A
  • Curent continuu ID la Tc=100oC 30 A
  • RDS(ON) pentru VGS = 18 V -
  • RDS(ON) pentru VGS = 15 V 60 mΩ
  • Voltaj UDS 750 V

The "G3R60MT07D" SiC MOSFET transistor is made using GeneSiC's patented Trench-Assisted Planar technology.

Features:

  • Low Temperature Coefficient of RDS(ON)
  • Lower QG and Smaller RG(INT)
  • Low Device Capacitances (COSS, CRSS)
  • LoRing – Electromagnetically Optimazed Design
  • Robust Body Diode with Low VF and Low QRR
  • 100% Avalanche (UIL) Tested

Applications:

  • Solar Inverters
  • EV/HEV Charging
  • Motor Drives
  • High Voltage DC-DC Converters
  • Switched Mode Power Supplies
  • UPS
  • Smart Grid Transmission and Distribution
  • Induction Heating and Welding
60,76 PLN
60,76 PLN Preț brut / buc.
49,40 PLN Preț net / buc.
cu TVA
Disponibilitate: Disponibil cantitate buc: 600
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  • Tipul carcasei TO-247-3
  • Curent continuu ID la Tc=25oC 43 A
  • Curent continuu ID la Tc=100oC 30 A
  • RDS(ON) pentru VGS = 18 V -
  • RDS(ON) pentru VGS = 15 V 60 mΩ
  • Voltaj UDS 750 V

The "G3R60MT07D" SiC MOSFET transistor is made using GeneSiC's patented Trench-Assisted Planar technology.

Features:

  • Low Temperature Coefficient of RDS(ON)
  • Lower QG and Smaller RG(INT)
  • Low Device Capacitances (COSS, CRSS)
  • LoRing – Electromagnetically Optimazed Design
  • Robust Body Diode with Low VF and Low QRR
  • 100% Avalanche (UIL) Tested

Applications:

  • Solar Inverters
  • EV/HEV Charging
  • Motor Drives
  • High Voltage DC-DC Converters
  • Switched Mode Power Supplies
  • UPS
  • Smart Grid Transmission and Distribution
  • Induction Heating and Welding