G2R1000MT17J MOSFET SIC.
  • G2R1000MT17J MOSFET SIC.

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Producător: GeneSiC Semiconductor

G2R1000MT17J MOSFET SIC.

  • G2R1000MT17J
  • Tipul carcasei TO-263-7
  • Curent continuu ID la Tc=25oC 5 A
  • Curent continuu ID la Tc=100oC 3 A
  • RDS(ON) pentru VGS = 18 V 1000 mΩ
  • RDS(ON) pentru VGS = 15 V -
  • Voltaj UDS 1700 V
Nou

The "G2R1000MT17J" SiC MOSFET transistor is made using GeneSiC's patented Trench-Assisted Planar technology.

Features:

  • Low Temperature Coefficient of RDS(ON)
  • Lower QG and Smaller RG(INT)
  • Low Device Capacitances (COSS, CRSS)
  • LoRing – Electromagnetically Optimazed Design
  • Robust Body Diode with Low VF and Low QRR
  • 100% Avalanche (UIL) Tested

Applications:

  • Solar Inverters
  • EV/HEV Charging
  • Motor Drives
  • High Voltage DC-DC Converters
  • Switched Mode Power Supplies
  • UPS
  • Smart Grid Transmission and Distribution
  • Induction Heating and Welding
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19,68 PLN
19,68 PLN Preț brut / buc.
16,00 PLN Preț net / buc.
cu TVA
Disponibilitate: Disponibil cantitate buc: 900

Reduceri de cantitate

Cantitate Reducere de cantitate Tu economisești
30 2,46 PLN 73,80 PLN
120 4,92 PLN 590,40 PLN
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  • Tipul carcasei TO-263-7
  • Curent continuu ID la Tc=25oC 5 A
  • Curent continuu ID la Tc=100oC 3 A
  • RDS(ON) pentru VGS = 18 V 1000 mΩ
  • RDS(ON) pentru VGS = 15 V -
  • Voltaj UDS 1700 V
Nou

The "G2R1000MT17J" SiC MOSFET transistor is made using GeneSiC's patented Trench-Assisted Planar technology.

Features:

  • Low Temperature Coefficient of RDS(ON)
  • Lower QG and Smaller RG(INT)
  • Low Device Capacitances (COSS, CRSS)
  • LoRing – Electromagnetically Optimazed Design
  • Robust Body Diode with Low VF and Low QRR
  • 100% Avalanche (UIL) Tested

Applications:

  • Solar Inverters
  • EV/HEV Charging
  • Motor Drives
  • High Voltage DC-DC Converters
  • Switched Mode Power Supplies
  • UPS
  • Smart Grid Transmission and Distribution
  • Induction Heating and Welding
mai puțin
Citeste mai mult

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