G3R™ 750V SiC MOSFETs Offer Unmatched Performance and Reliability

Опубликовано: July 7th 2021
 

Next generation of GeneSiC’s 750V G3RTM SiC MOSFETs delivers next-level performance, robustness and quality unseen in its counterparts.

The benefits of this system include increased power density, low on-state drops at operating temperatures, enhanced switching speeds, compact size and low EMI. GeneSiC’s G3RTM offered in optimized, low-inductance discrete packages (surface mount or in through hole) run with lowest possible power losses under all conditions and offer ultra-fast switching speeds. These qualities make them yield significantly better performance levels compared to currently available SiC MOSFETs.

“High-efficiency energy usage has become a critical deliverable in next-generation power converters and SiC power devices continue to be the key components driving this revolution. After years of development work towards achieving the lowest on-state resistance and robust short circuit and avalanche performance, we are excited to release the industry’s best performing 750V SiC MOSFETs. Our G3R™ enable power electronics designers to meet the challenging efficiency, power density and quality goals in applications like solar inverters, EV on-board chargers and server/telecom power supplies. An assured quality, supported by fast turn-around and automotive-qualified high volume manufacturing further enhances their value proposition. ” said Dr. Ranbir Singh, President at GeneSiC Semiconductor.

Features:
  • Industry’s lowest gate charge (QG) and internal gate resistance (RG(INT))
  • Lowest RDS(ON) change with temperature
  • Low output capacitance (COSS) and miler capacitance (CGD)
  • 100% avalanche (UIL) tested during production
  • Industry-leading short circuit withstand capability
  • Fast and reliable body diode with low VF and low QRR
  • High and stable gate threshold voltage (VTH) across all temperature and drain-bias conditions
  • Advanced packaging technology for lower thermal resistance and lower ringing
  • Manufacturing uniformity of RDS(ON), VTH and breakdown voltage (BV)
  • Comprehensive product portfolio and safer supply chain with automotive-qualified high volume manufacturing
Applications:

  • PV Inverters
  • Electric Vehicles/Hybrid Electric Vehicles onboard chargers
  • Telecom & Server Power Supplies
  • Switched Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Uninterruptible Power Supplies (UPS)
  • Induction Heating
  • Energy Storage and Battery Charging
All of GeneSiC Semiconductor’s SiC MOSFETs are targeted for automotive applications (AEC-Q101) and PPAP-capable.

G3R60MT07J – 750V 60mΩ TO-263-7 G3RTM SiC MOSFET
G3R60MT07K – 750V 60mΩ TO-247-4 G3RTM SiC MOSFET
G3R60MT07D – 750V 60mΩ TO-247-3 G3RTM SiC MOSFET
 

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