MOSFET SiC Gen-3 'Fast' transistors from Navitas Semiconductor: A New Standard of Performance for the AI and EV Industry

Introduction

The development of SiC (silicon carbide) and GaN (gallium nitride) technologies is bringing revolutionary changes to the electronics industry, particularly in the fields of artificial intelligence (AI) and electromobility (EV). Navitas Semiconductor, a leader in the production of next-generation semiconductors, is introducing the MOSFET SiC Gen-3 'Fast' (G3F) transistors, which are expected to set a new standard of performance for these sectors.

The Need for Efficiency in AI and EV

The growing interest in artificial intelligence and electromobility presents new challenges related to energy efficiency and power density. Navitas Semiconductor’s MOSFET SiC Gen-3 'Fast' transistors are the answer to these needs, offering exceptional performance and reliability.

Technology of MOSFET SiC Gen-3 'Fast' Transistors

The G3F transistors use advanced 'Trench-Assist Planar' technology, which offers numerous benefits:

• Low RDS(ON) versus temperature: This technology allows for a minimal increase in RDS(ON) as the temperature rises, resulting in lower power losses. At high temperatures, it offers up to 20% lower RDS(ON) compared to competitors.
• 100% avalanche tested (UIL): The transistors are characterized by the highest capability to handle excess energy in failure conditions, ensuring reliability.
• Longer short-circuit withstand time: They offer 30% longer short-circuit withstand time, enhancing their durability in high-power applications.
• Narrow threshold voltage distribution: This allows for easy parallel connection, making it ideal for high-power applications.

Applications of G3F Transistors

The collaboration of G3F transistors with AI Data Centers enables increased power supply unit capacities and improved power density. In the electromobility sector, G3F transistors support fast EV chargers and roadside charging infrastructure, improving efficiency and accelerating the charging process.

Advantages of G3F Transistors

MOSFET SiC Gen-3 'Fast' transistors offer exceptional performance and efficiency, making them an ideal solution for high-power systems. They are also characterized by a longer lifespan and resistance to extreme operating conditions.

The Future of SiC Technology in AI and EV

The prospects for the development of SiC technology in the context of future AI and EV needs are promising. Navitas Semiconductor’s MOSFET SiC Gen-3 'Fast' transistors can play a key role in the further development of these sectors by providing reliability and energy efficiency.

Summary

The MOSFET SiC Gen-3 'Fast' transistors from Navitas Semiconductor represent a breakthrough in semiconductor technology, offering significant benefits for AI and EV applications. With advanced technology and excellent performance, they are an ideal choice for future energy solutions.