Текущие преобразователи текущих в SMD Go-SME и технологии Go-SMS
  • Текущие преобразователи текущих в SMD Go-SME и технологии Go-SMS

Фотографии предназначены только для информационных целей. Посмотреть спецификацию продукта

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Производитель: LEM

Текущие преобразователи текущих в SMD Go-SME и технологии Go-SMS

GO – SME and GO – SMS current transducers

GO-SME and GO-SMS series are miniature SOIC packaged sensor for isolated current measurements integrating the conductor.

 

Przetworniki prądowe w technologii SMD serii GO-SME i GO-SMS

Features:

  • AC[&]DC current measurement for 10 and 20A (GO-SME and GO-SMS) or 30A (GO-SMS) nominal
  • SOIC8 (GO-SME) or SOIC16 (GO-SMS) packaging for SMD automatic assembly
  • Isolated measurement (2500V RMS isolation test voltage for GO-SME and 3000V RMS isolation test voltage for GO-SMS)
  • Low power consumption
  • High immunity to external interference
  • High insulation capability
  • Single power supply +5 V
  • Response time 2 μs
  • 5 years warranty
  • No magnetic hysteresis
  • Low electrical resistance (0.9mΩ - GO-SME and 0.75mΩ - GO-SMS)
  • Ratiometric voltage output with high sensitivity (up to 80mV/A)
  • DC – 300kHz
  • OCD (only GO-SMS)

Applications:

  • Small drives
  • HVAC
  • E-bike
  • Solar (GO-SMS)

Rated data:

Model Primary nominal current IPN[A] Measuring range IPM[A] Theoretical sensitivity GTH[mV/A] Accuracy [%] Package OCD
GO 10-SME 10 ±25 80 ±1.3 SOIC 8 NIE
GO 20-SME 20 ±50 40 ±1.3 SOIC 8 NIE
GO 10-SMS 10 ±25 80 ±1.3 SOIC 16 TAK
GO 20-SMS 20 ±50 40 ±1.3 SOIC 16 TAK
GO 30-SMS 30 ±75 26.7 ±1.3 SOIC 16 TAK




GO-SME

Connection diagram:

Przetworniki prądowe w technologii SMD serii GO-SME schemat

Block diagram:

Przetworniki prądowe w technologii SMD serii GO-SME schemat blokowy

 

GO-SMS

Connection diagram:

Przetworniki prądowe w technologii SMD serii GO-SMS schemat łączeniowy

Block diagram:

Przetworniki prądowe w technologii SMD serii GO-SMS schemat blokowy

External overcurrent detection

Parametr Symbol Unit Specyfication Conditions
min. typ. max.
External OCD voltage UE V 0.3   2  
External OCD output on resistance to ground RonE Ω 35 200 300  
External OCD response time trE μs   10   To be added to the sensor response time
Internal OCD threshold error εI %   ±5   Switch point error between VOUT a UE
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GO – SME and GO – SMS current transducers

GO-SME and GO-SMS series are miniature SOIC packaged sensor for isolated current measurements integrating the conductor.

 

Przetworniki prądowe w technologii SMD serii GO-SME i GO-SMS

Features:

  • AC[&]DC current measurement for 10 and 20A (GO-SME and GO-SMS) or 30A (GO-SMS) nominal
  • SOIC8 (GO-SME) or SOIC16 (GO-SMS) packaging for SMD automatic assembly
  • Isolated measurement (2500V RMS isolation test voltage for GO-SME and 3000V RMS isolation test voltage for GO-SMS)
  • Low power consumption
  • High immunity to external interference
  • High insulation capability
  • Single power supply +5 V
  • Response time 2 μs
  • 5 years warranty
  • No magnetic hysteresis
  • Low electrical resistance (0.9mΩ - GO-SME and 0.75mΩ - GO-SMS)
  • Ratiometric voltage output with high sensitivity (up to 80mV/A)
  • DC – 300kHz
  • OCD (only GO-SMS)

Applications:

  • Small drives
  • HVAC
  • E-bike
  • Solar (GO-SMS)

Rated data:

Model Primary nominal current IPN[A] Measuring range IPM[A] Theoretical sensitivity GTH[mV/A] Accuracy [%] Package OCD
GO 10-SME 10 ±25 80 ±1.3 SOIC 8 NIE
GO 20-SME 20 ±50 40 ±1.3 SOIC 8 NIE
GO 10-SMS 10 ±25 80 ±1.3 SOIC 16 TAK
GO 20-SMS 20 ±50 40 ±1.3 SOIC 16 TAK
GO 30-SMS 30 ±75 26.7 ±1.3 SOIC 16 TAK




GO-SME

Connection diagram:

Przetworniki prądowe w technologii SMD serii GO-SME schemat

Block diagram:

Przetworniki prądowe w technologii SMD serii GO-SME schemat blokowy

 

GO-SMS

Connection diagram:

Przetworniki prądowe w technologii SMD serii GO-SMS schemat łączeniowy

Block diagram:

Przetworniki prądowe w technologii SMD serii GO-SMS schemat blokowy

External overcurrent detection

Parametr Symbol Unit Specyfication Conditions
min. typ. max.
External OCD voltage UE V 0.3   2  
External OCD output on resistance to ground RonE Ω 35 200 300  
External OCD response time trE μs   10   To be added to the sensor response time
Internal OCD threshold error εI %   ±5   Switch point error between VOUT a UE
Меньше
Читать больше
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