Silicijum-karbidni poluprovodnički elementi

We’re an experienced supplier of necessary products for the category of transistors. 

We’re offering field-effect transistors: MOS-FET and IGBT transistors, as well as silicon carbide (SiC) semiconductor elements.

MOS-FET transistors
MOS-FET transistors...

We’re an experienced supplier of necessary products for the category of transistors. 

We’re offering field-effect...
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Products that are marked "On Order" in the "Available Quantity" column are usually not in stock. Such products are available for purchase, however, due to their limited customer base, they usually have higher minimum quantities. DACPOL offers products that are not in stock for the following reasons: DACPOL currently has a large number of electronic components in stock and adds new products every day, however, tens of thousands of additional components and their various variants are available from our suppliers. Even though it is unreasonable to have all these products in stock due to the limited sales, we believe that it is in the best interest of our customers to make them available. Our goal is to inform customers about the maximum number of products available and enable them to make decisions based on specifications, prices, availability, required minimums and our technical advice. Please note that selecting the "In Stock" checkbox may limit the display to only products available for delivery straight from the shelf.
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picture_as_pdf Полуводички елементи са силиконским карбидом Mitsubishi Полуводички елементи са силиконским карбидом ВИДИ ГА -- On Order
picture_as_pdf Moduli silicijum karbida (SiC)- Powerex and Mitsubishi Mitsubishi Moduli silicijum karbida (SiC)- Powerex and Mitsubishi ВИДИ ГА -- On Order
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We’re an experienced supplier of necessary products for the category of transistors. 

We’re offering field-effect transistors: MOS-FET and IGBT transistors, as well as silicon carbide (SiC) semiconductor elements.

MOS-FET transistors
MOS-FET transistors cooperate well in parallel connections. They can be combined in parallel up to several dozen pieces. They are easily controlled and do not require adjustment in the load current distribution between them.

IGBT transistors
IGBT transistors are characterized by a small decrease in conduction voltage (from 2.15 - 5.2V) at high current (10 - 3600A), high voltage blocking capacity (250 - 6500V), voltage control via an isolated gate, and high switching speed. They are produced in the form of standard modules, high-frequency modules, high voltage modules as well as intelligent modules, and high voltage intelligent modules. In addition, high-voltage diode modules are offered for cooperation with IGBT transistors.

The IGBT transistors manufactured in the form of intelligent modules contain, besides transistors, control systems as well as short circuit and overvoltage protection.